Cong Zhong, Wu Chunyu, Wang Rong, et al. Study and Fabrication of Channel Base Transistor with Wider Temperature Range,High Frequency and High Breakdown Voltage[J]. Acta Electronica Sinica, 1999, (5).
Cong Zhong, Wu Chunyu, Wang Rong, et al. Study and Fabrication of Channel Base Transistor with Wider Temperature Range,High Frequency and High Breakdown Voltage[J]. Acta Electronica Sinica, 1999, (5).DOI：
Using the normal planar technology of bipolar junction transistor
we have fabricated the p n p high frequency
high breakdown voltage transistors which can operate in the wider temperature range from -55℃ to 180℃.In this paper we also describe the design
structure and fabrication of the new device with a smaller drift of h FE when temperature is changed.The tested results show that the changing rate of h FE of the new device is less than or equal to 35% when temperature is raised from 25℃ up to 180℃
which is 20% better than that of the normal bipolar transistor;whereas the changing rate of h FE is less than or equal to 30% when temperature is fallen from 25℃ down to -55℃.
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