In this paper a novel triple pulse laser crystallization method to enlarge grain size of polySi was proposed.The laser annealing computer model was used to simulate transient temperature profile

melt depth

solidification velocity of Si film under the novel laser annealing.All of them were compared with those of single pulse and double pulse laser annealing.The simulation results showed the novel method can reduce solidification velocity to 027m/s when energy density and delay time were optimized.The substrate heating experiments demonstrated that the method could enlarge grain size effectively.