SHEN Bo, JIANG Jian fei, CAI Qi yu. Active Loads Based on Capacitively Coupled Single Electron Transistor[J]. Acta Electronica Sinica, 1999, (11).DOI：
电容耦合单电子晶体管有源负载
摘要
本文基于单电子隧道效应的半经典模型
由电容耦合单电子晶体管的本征
电流电压特性出发
研究了在各种组态下
电容耦合单电子晶体管有源负载的本征电流电压特性
讨论了它们的交流小信号等效电路
所得到的结论对于单电子模拟电路的设计具有指导意义
Abstract
Starting with the intrinsic current voltage properties of Capacitively coupled Single Electron Transistor （C SET）
the intrinsic current voltage properties of each form of the C SET active loads are studied by using a quasi classical model of the single electron tunneling effect
and its small signal equivalent circuit is also discussed.The results are significant for the design of the single electron analog circuits.
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