Cai Qiyu, Jiang Jianfei, Shen Bo. The Simulation of Kinetic Admittance for High Tc Superconducting Field Effect Transistor[J]. Acta Electronica Sinica, 1999, (5).
Cai Qiyu, Jiang Jianfei, Shen Bo. The Simulation of Kinetic Admittance for High Tc Superconducting Field Effect Transistor[J]. Acta Electronica Sinica, 1999, (5).DOI：
A kinetic admittance parameter was introduced on the basis of our general small signal model of superconducting field effect devices.A numerical simulation of low frequency current voltage characteristic for the high Tc superconducting field effect transistor is conducted.Dependence of the normal current and supercurrent in the generalized two fluid model on gate voltage
drain voltage
temperature and frequency was analyzed.A new investigation method of low frequency characteristic of high Tc superconducting field effect devices was founded.
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