西安电子科技大学微电子研究所
纸质出版:1999
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[1]姜晓鸿,赵天绪,郝跃,徐国华.一种IC缺陷轮廓建模的新方法[J].电子学报,1999(05):47-49.
Jiang Xiaohong, Zhao Tianxu, Hao Yue, et al. A New Approach to Model the IC Defect Outlines[J]. Acta Electronica Sinica, 1999, (5).
现用于集成电路(IC)成品率预报及故障分析的缺陷模型均是用圆或正方形来代替真实缺陷的复杂轮廓进行近似建模的,从而在模型中引入了很大的误差.本文利用分段线性插值的思想直接对真实缺陷的方向尺寸进行逼近,从而提出了一种新的缺陷轮廓表征模型.实验结果表明:与传统的最大圆模型、最小圆模型及椭圆模型相比,新模型的建模精度有了较大的提高.
In all available defect outline models used for yield prediction and inductive fault analysis of integrated circuits (IC)
real rugged outlines are usually replaced with circular discs or squares.Based on the idea of piecewise linear interpolation
this paper presents a new model to characterize those real defect outlines.The comparison of the new model with those models available indicates that the new model is a more accurate defect outline model.
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