ECR-PECVD制备UHF大功率管浅结芯片中Si<sub>3</sub>N<sub>4</sub>钝化膜的应用研究

陈俊芳; 王卫乡; 任兆杏; 丁振峰; 王道修; 宋银根

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ECR-PECVD制备UHF大功率管浅结芯片中Si₃N₄钝化膜的应用研究

更新时间：2025-12-08

- ECR-PECVD制备UHF大功率管浅结芯片中Si₃N₄钝化膜的应用研究
- Study on the Application of Si₃N₄ Passivation Film in UHF high Power Transistor Shallow Junction Chip by ECR-PECVD
- 电子学报 1998年第5期页码：119-121
- 作者机构：
  
  1.   华南师范大学量电所!广州
  2.   510631
  3.   中科院等离子体物理研究所!合肥
  4.   230031
  5.   中国华晶电子集团公司!无锡
  6.   214061
- 作者简介：
- 基金信息：
  
  中国科学院85重点研究课题;国家自然科学基金!
- DOI：
  中图分类号： TN32
- 纸质出版：1998
- 稿件说明：
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[1]陈俊芳,王卫乡,任兆杏,丁振峰,王道修,宋银根.ECR-PECVD制备UHF大功率管浅结芯片中Si_3N_4钝化膜的应用研究[J].电子学报,1998(05):119-121.

陈俊芳, 王卫乡, 任兆杏, et al. Study on the Application of Si₃N₄ Passivation Film in UHF high Power Transistor Shallow Junction Chip by ECR-PECVD[J]. Acta Electronica Sinica, 1998, (5): 119-121.
[1]陈俊芳,王卫乡,任兆杏,丁振峰,王道修,宋银根.ECR-PECVD制备UHF大功率管浅结芯片中Si_3N_4钝化膜的应用研究[J].电子学报,1998(05):119-121. DOI：

陈俊芳, 王卫乡, 任兆杏, et al. Study on the Application of Si₃N₄ Passivation Film in UHF high Power Transistor Shallow Junction Chip by ECR-PECVD[J]. Acta Electronica Sinica, 1998, (5): 119-121. DOI：

摘要

利用ECR－PECVD技术将Si3N4薄膜成功地应用于UHF大功率晶体管浅结芯片中的钝化膜，使芯片电特性有较好改善，完全避免了芯片后加工工序中划伤造成的芯片报废现象，提高了成品率，分析了Si3N4膜的钝化机理。

Abstract

The Si3N4 passivation films have been successfully used in the UHF high power semiconducting transistor shallow junction chip by ECR-PECVD. The electric properlies of passivated chip have been improved.The scratch of the chip has completely avoided in the post-process. The finished product rate has been increased. The passivation mechanism of Si3N4 thin film has been analyzed.

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ECR－PECVD制备Si₃N₄薄膜的特性及其应用的研究

ECR-PECVD制备UHF大功率管浅结芯片中Si3N4钝化膜的应用研究

Study on the Application of Si3N4 Passivation Film in UHF high Power Transistor Shallow Junction Chip by ECR-PECVD

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摘要

Abstract

关键词

Keywords

references

ECR-PECVD制备UHF大功率管浅结芯片中Si₃N₄钝化膜的应用研究

Study on the Application of Si₃N₄ Passivation Film in UHF high Power Transistor Shallow Junction Chip by ECR-PECVD