the influence of δ-shaped dopingprofiles on deep-submicron MOSFET performance is systematically investigated. It is discoveredthat δ-shaped doping configuration can not only effectively suppress short-channel effects
but alsocan provide high driving capability with improved doping fluctuation tolerances. Simulationsdemonstrate that the incorporation of δ-shaped doping will not result in noticeable increase in thehot-electron generation rate as long as the peak doping is placed for a desired distance away the Si/SiO2 interface. The proposed δ doping profile for 0. lμm MOSFET’s exhibits even higher figure ofmerits than the uniform substrate doping.
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