This paper presents a very high speed ECL static frequency divider circuit

the structure of poly-St emitter NPN bipolar device is given and the key technologies such as salicide contact

deep trench isolation

shallow junction and thin base formation are described. By using this advanced St bipolar technology

the average gate delay less than 50ps is achieved for 19-stage ring oscillator with 3pm feature size. The circuit and layout design for a 1/2 divider as well as some strategies for enhancing performance are discussed in detail

and the 1/2 divider has got a maximum operating frequency of 3.2GHz.