An analytic threshold-voltage model has been established based on the approximate solution of the 2D Poisson’ s equation for the fully-depleted SOI MOSFET. The accuracy of the model is verified by comparison with the simulation results of PISCES and the corresponding experimental data. The model has also such advantages as simple and quick calculation

analytic expression and explicit physical meaning. The establishment of the model is helpful to circuit simulation

study of device physical characteristics and the corresponding process design for the fullydepleted SOI MOSFET.