赵宝瑛, 何美华, 罗葵, et al. Measurement of Series Resistances in Polysilicon Emitter Bipolar Transistors for High Speed VLSI[J]. Acta Electronica Sinica, 1996, (5).
赵宝瑛, 何美华, 罗葵, et al. Measurement of Series Resistances in Polysilicon Emitter Bipolar Transistors for High Speed VLSI[J]. Acta Electronica Sinica, 1996, (5).DOI：
The commonly used methods to measure series resistances in bipolar transistors
including the open-collector method of extraction for emitter series resistance Re
the Ic-Vbe method of measurement of base series resistance Rb and the Forced-Beta method of getting collector series resistance Rc
are analyzed and tested. The results show that the above methods aren’t available to measure series resistances in polysilicon emitter bipolar transistors. A new set of measurement methods of series resistances in bipolar transistors is presented
it overcomes conventional method’ s troubles and is suitable for measurement of series resistances in polysihcon emitter transistors for high speed VLSI.
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