The 1000V blocking capability of LDMOSFET which is suitable for HVIC（High Voltage Integrated Circuit） has been achieved using RESURF（REduced SURface Field） technique and conventional low-voltage IC technology.The design

structure

process and testing results of this high-voltage LDMOSFET are described.The effect of the length of gate metal extension over the drift region on the breakdown voltage of the RESURF LDMOSFET is investigated using experimental and analytical methods for the first time.