The minority carrier lifetime of Au-doped silicon has been measured by photovoltaic method.The Au-doped concentrations are between 10￣（12）￣ 6.62×10￣（15）cm￣（-3）

covering four orders of magnitude.On the basis of the systematic measurement and the statistical calculation of minority carier lifetime of two kinds of N-type Au-doped sihcon with different resistance

the views on the properties of Au in silicon are presented.The degeneracy factors and the interrelation between Au donor and acceptor are taken into account in statistical calculation. Both experimental and calculated results show that Au doping at high concentration can change N-type high-resistance silicon into P-type.