We report a-Si:H thin films prepared by layer-by-layer deposition. The influences of deposition rate

sublayer thickness and H-plasma treatment of film properties were studied. Our results indicate that H-plasma treatment can induce the samples changing from amorphous to microcrystalline phase

and also shift the Fermi energy level upwards or downwards

depending on the deposition and H-plasma treatment conditions.a-Si: H with higher photosensitivity and stability can be obtained under lower deposrtion rate and smaller sublayer thickness combining with suitable H-plasma treatment.