Spectra has been employed to investigate the features of strained SiGe alloys deposited by Rapid Thermal Process and Very Low Pressure Chemical Vapor Deposition（RTP/VLPCVD） method.Auger Electron Spectroscopy has been used to determine Ge composition in SiGe layer.The Ge atom in high Ge composition SiGe alloy distributes more homogeneously and randomly than low Ge composition one.The hydrogen dilution of reaction gases and the full relaxed strain make Ge atom distribute homogeneously in SiGe alloy.These results have been explained by the influence of strain effect

atom migration and hydrogen coverage.