An improved simulated annealing method is presented.The method is based on adjusting and compressing the parameter bounds

following the tracks of optimal point and introducing the uniform experiment into Metropolis procedure.The method presented here has been successfully applied to the extraction of the parameters of equivalent circuits of microwave FETs.It is evident from optimization results that this approach is less time consuming and more efficient than the tree annealing and hybrid gradient descent and tree annealing approach.