The interaction between hydrogen and centers in silicon introduced by 4d trasition impurities was investigated

and the order of sensitivity of these deep centers to hydrogen passivation was obtained. From the point of view of hydrogen passivation

we have got evidences to support the identical center suggestion for the levels related in p-Si: Pd and n-Si : Rh

and we suggest that E（0.53）and H（0. 36） in Si : Mo have this kind of property. The mechanism of hydrogen passivation is also discussed through the charge states of atomic hydrogen in silicon.