Following the work of the simulation for GaAs submicron device with Monte Carlo particle method

this paper uses the same way to simulate silicon submicron MESFET.In addition to deal with different scattering mechanisms in silicon

advanced concepts and methods

such as FFT（Fast Fouier Transfomation） and fast self-scattering

have been used.It to some extent overcomes the disadvantage of Monte Carlo method.Much computer time has been saved.The results of the simulation demonstrate the performance of silicon MESFET.