A charge-based model for dc and transient circuit simulation has been implemented in SPICE

thereby enabling proper simulation and CAD of SOI/CMOS integrated circuits to be realized. The utility and computing efficiency of the SOIMOSFET model implementation are demonstrated by simulating several representative SOI/CMOS circuits. It has been shown that the shorter channel-length and the thinner Si-film thickness

the faster SOI/CMOS circuit speed

which can compensate low speed caused by decreased power voltage.