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山东工业大学
纸质出版：1994
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[1]郝丕柱,裘南畹.金属氧化物气敏半导体表面受感性能的研究[J].电子学报,1994(08):105-108.
郝丕柱, 裘南畹. An Investigation of Surface Receptor Property of Gas Sensing Metal Oxide Semiconductors[J]. Acta Electronica Sinica, 1994, (8).
[1]郝丕柱,裘南畹.金属氧化物气敏半导体表面受感性能的研究[J].电子学报,1994(08):105-108. DOI：
郝丕柱, 裘南畹. An Investigation of Surface Receptor Property of Gas Sensing Metal Oxide Semiconductors[J]. Acta Electronica Sinica, 1994, (8). DOI：
本文提出了用化学反应动力学理论研究半导体统计分布的方法，并用此方法对在气敏材料表面可能产生吸附氧离子Ｏ２－、Ｏ－的几种历程进行了研究，导出了浓度比［Ｏ２－］／［Ｏ－］的公式。然后根据［Ｏ２－］／［Ｏ－］随温度的升高而下降的事实，通过对吸附氧离子麦德隆（Ｍａｄｅｌｕｎｇ）势的计算，得出了在完整离子晶体表面上不可能产生氧离子Ｏ－的结论，并讨论了可能产生离子Ｏ－的途径。
This paper first suggested a method
which has used the kinetic theory of chemical reation for investigation of semiconductor statistics （distributions） then
a several channels
in which oxygen negative ion O
2
￣-
O￣- can be produced on the surface of gas sensing materials are analysed by the same method
and the formula of the concentrationratio [O
￣-]/[O￣-]
decreases with the temperature increases and estimating of ionsorbed madelung potential
a conclusion is made
which it is impossible for ion O￣- to be produced on the surface of the perfect ionic crystals. Furthermore
the channel which possiblly produces O￣- on the surface is described.
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