双极型IC核辐射下的瞬时损坏

夏培邦

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双极型IC核辐射下的瞬时损坏

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- 双极型IC核辐射下的瞬时损坏
- Transient Damages of Bipolar Integrated Circuit Under Nuclear Radiation
- 电子学报 1993年第2期页码：97-100
- 作者机构：
  
  机电部第24所,四川,永川,63216
- 作者简介：
- 基金信息：
- DOI：
  中图分类号：
- 纸质出版：1993
- 稿件说明：
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[1]夏培邦.双极型IC核辐射下的瞬时损坏[J].电子学报,1993(02):97-100.

Xia Peibang. Transient Damages of Bipolar Integrated Circuit Under Nuclear Radiation[J]. Acta Electronica Sinica, 1993, (2): 97-100.
[1]夏培邦.双极型IC核辐射下的瞬时损坏[J].电子学报,1993(02):97-100. DOI：

Xia Peibang. Transient Damages of Bipolar Integrated Circuit Under Nuclear Radiation[J]. Acta Electronica Sinica, 1993, (2): 97-100. DOI：

摘要

本文从连续性方程和粒子通量方程出发

导出了矩形y辐射脉冲作用下双极器件中光电流的数学模型;论述了扩散电阻的光电流效应和电导调制效应

以及扩散电阻随γ剂量率变化的模型。最后给出了集成稳压电源的模拟数值与现场辐射结果的比较

并据此提出了双极型IC抗γ辐射的加固建议。

Abstract

Based on the continuity equation and the particle flux equation

this paper deriveds the methematical model of photocurrent in bipolar devioes under square-pulsed γ radiation. In addition

this paper describes the photocurrent effect and the conductivity modulation effect on diffused resistors as well as the model in which the diffused resistor varies with γ radiation rate. Finally

a comparison is given which shows good agreement between the simulation of integrated voltage regulator and the practical radiation experiments

and suggestions for bipolar IC’s γ radiation-hardening are presented.

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