The current-voltage characteristics in N-channel SOIMOSFET which was fabricated on laser annealed polycrystalline silicon have been investigated at room temperature （RT）

liquid nitrogen temperature （LN） and liquid helium temperature （LHe）. The results show that the Kink style of transistor with film contact terminal at RT is very similar to that observed in N-MOS devices at liquid helium temperature. The Kink size is larger at LN than at RT and larger at LHe than at LN. The Kink characteristics at the three temperatures can be explained by capacitance effect

carriers freezen mechanism at low temperature and generation and recombination of carriers under different bias voltages.