表面电荷对具有场限环的p<sup>+</sup>-n结电场及电位分布的影响

陈星弼

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表面电荷对具有场限环的p⁺-n结电场及电位分布的影响

更新时间：2025-12-08

- 表面电荷对具有场限环的p⁺-n结电场及电位分布的影响
- Effect of Surface Charge to the Potential and Field Distribution in p⁺-n Junctions with Floating Field Limiting Rings
- 电子学报 1988年第5期页码：14-19
- 作者机构：
  
  成都电讯工程学院
- 作者简介：
- 基金信息：
- DOI：
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- 纸质出版：1988
- 稿件说明：
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[1]陈星弼.表面电荷对具有场限环的p~+-n结电场及电位分布的影响[J].电子学报,1988(05):14-19.

Chen Xing-bi. Effect of Surface Charge to the Potential and Field Distribution in p⁺-n Junctions with Floating Field Limiting Rings[J]. Acta Electronica Sinica, 1988, (5): 14-19.
[1]陈星弼.表面电荷对具有场限环的p~+-n结电场及电位分布的影响[J].电子学报,1988(05):14-19. DOI：

Chen Xing-bi. Effect of Surface Charge to the Potential and Field Distribution in p⁺-n Junctions with Floating Field Limiting Rings[J]. Acta Electronica Sinica, 1988, (5): 14-19. DOI：

摘要

本文利用泊松方程及拉普拉斯方程的圆柱坐标形式解

得出了有表面电荷时具有场限环的p

-n结表面电场与电位分布的公式。结果表明

正表面电荷使主结与第一环及各环间的电压增加

使最大电场变大。利用所得结果解释了前人的结果。推得的公式可用来结合实际工艺条件设计场限环。

Abstract

In this paper

the surface field and potential distribution of a p-n junction with floating field limiting rings （FFLR） is derived by making use of cylindrical solutions of Poi-sson’s eq. and Laplace’s eq.

where the latter is used to take account of surface charge effect. The results show that positive surface charges induce increases of maxima electric field and voltage drops between the main junction and the first ring as well as between the neighbor rings. The former results by other authors are also explained by using this theory. The formulas obtained are helpful to the design of FFLR in high voltage devices.

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表面电荷对具有场限环的p+-n结电场及电位分布的影响

Effect of Surface Charge to the Potential and Field Distribution in p+-n Junctions with Floating Field Limiting Rings

DOI：

摘要

Abstract

关键词

Keywords

references

表面电荷对具有场限环的p⁺-n结电场及电位分布的影响

Effect of Surface Charge to the Potential and Field Distribution in p⁺-n Junctions with Floating Field Limiting Rings