A cw Ar+ laser was used to recrystallize a-Si film which was deposited on a metal substrate covered with insulator layer and implanted with boron ions at an energy of 60keV and a dose of 5×1015 cm-2. The piezoresistance material of high sensitivity was obtained after laser-recrystallization. Its gauge factor reached to 30

the grain size was increased to more than 10μm×40μm

the concentration profile of impurities became uniform and electrical properties of SOM were improved significantly. The devices made of this material have pressure sensitivity of 6mv/v bar .