The refractory metal silicide is considered as a new technique instead of doped polysilicon. A new technique of forming silicide of titanium is introduced in this paper.Ti+ are implanted into LPCVD polysilicon film and followed by thermal annealing in H2 to form TiSi2. The relation of TiSi2 forming condition with ion implanted dose and energy is given. Experimental results show that the sheet resistance of TiSi2 film is down to 0.95Ω/□

corresponding bulk resistivity is 26μΩ-cm. This value is less than that of ordinary doped LPCVD polysilicon by one order of magnitude. The microstructure of Ti silicide was studied with X-ray diffraction and TEM electron diffraction. The distribution of depth profile of Ti in polysilicon and composition of titanium silicide were analysed by AES and SIMS.