南京大学固体物理研究所
纸质出版:1984
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[1]颜永红,何宇亮,吴汝麟.晶化对掺杂GD非晶硅薄膜导电性能的作用[J].电子学报,1984(05):51-54.
Yan Yong-hong, He Yu-liang, Wu Ru-lin. The Eflect of Crystallization on Conductance of GD a-Si: H Films[J]. Acta Electronica Sinica, 1984, (5): 51-54.
在a-Si:H薄膜中进行置换式硼、磷掺杂能引起薄膜结构的变化。在一定衬底温度下
增大r.f淀积功率能使薄膜发生由非晶向微晶及类多晶结构的转化
晶化了的非晶硅薄膜的室温电阻率又可下降三个数量级
其电导激活能也大幅度下降。从而使薄膜的导电性能得到提高。只有在类多晶结构的硅膜中才能获得更高的电导率。
Proper regulation of technological parameters
Ts and r. f deposition power
can result in a mode transformation from amorphous morphology into microcrystalline or polysili-con-like structure.The crystallization of amorphous silicon film leads to a further reduction in its room-temperature resistivity by about three order of magnitude and a reduction in its activation energy of electrical conductivity. The enhancement of conducting performance is a consequence of the narrow band tail width in crystallized microcrystalline silicon.
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