晶体管的发明是固体物理与先进技术相结合的成果。在一块硅片上用相同的工艺流程制作晶体管、电阻和电容的技术导致了集成电路的发明。LSI的成功归因于成品率的提高。芯片的设计和工艺方面的重要革新使VLSI进展很快。研究短沟道效应、降低功率密度和互连电阻值
开发1μm或小于1μm的光刻技术和低于800℃的低温工艺流程以及高集成度芯片的封装
将是下一步的重要课题。
The invention of the junction transistor was the result of the combination of the progress in solid state physics with advanced techniques. The possibility of making trans’stor. resistor and capacitor in the same process led to the invention of IC’s.Yield improvement contributed to the success of LSI
VLSI is progressing very rapidly as a result of innovations in chip design and technology. The short channel effect
power density and interconnect resistance reduction. ≤1μm lithography
low temperature process (below 800℃) and high integration package will be critical for further development.
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