This is the second part of our discussion on the new donor generated in p-type CZ-Si commonly used for LSI manufacture after annealing at 700℃. In n-type CZ-Si

the new donor can also be observed and its properties are the same as in p-type Si

but its gene-ration rate and concentration are both lower than that in p-type Si. The new donor is proved to be closely correlated with the thermal donor.The preannealing in the temperature range from 300℃-800℃ can promote the new donor generation with 450℃ being the most effective temperature.However

the preannealing at the temperature above 800℃ would decrease the new donor generation. The new donor is more stable than the thermal donor. Only 68% of the new donor is eliminated after annealing at 1050℃ for 30 hours in the sample containing the new donor of 1.33 × 1016cm-3. The nature and generation of the new donor are also discussed in detail.