结区缺陷及其对LED光电特性的影响

刘耀忠; 马仁祥

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结区缺陷及其对LED光电特性的影响

更新时间：2025-12-08

- 结区缺陷及其对LED光电特性的影响
- Crystal Defects in LED and Their Effects on Photo-Electric Properties
- 电子学报 1982年第3期页码：102-104
- 作者机构：
  
  中国科学院长春物理所
- 作者简介：
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- 纸质出版：1982
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[1]刘耀忠,马仁祥.结区缺陷及其对LED光电特性的影响[J].电子学报,1982(03):102-104+55.

Liu Yao-zhong, Ma Ren-xiang. Crystal Defects in LED and Their Effects on Photo-Electric Properties[J]. Acta Electronica Sinica, 1982, (3): 102-104.
[1]刘耀忠,马仁祥.结区缺陷及其对LED光电特性的影响[J].电子学报,1982(03):102-104+55. DOI：

Liu Yao-zhong, Ma Ren-xiang. Crystal Defects in LED and Their Effects on Photo-Electric Properties[J]. Acta Electronica Sinica, 1982, (3): 102-104. DOI：

摘要

本文分析了多种发光二极管（LED）

总结了结区缺陷的种类及其对发光特性的影响。

Abstract

In a study we observed a variety of LED by SEM and investigated four types of defects in p-n juction and near by. They are dark points

mechnical scars

twin crystals and misfit dislocations. We analysed their effects on photo-electric properties such as non-radiative recombination behaviour of dislocation and twin crystal. Effects of dislocation on luminescence efficiency

life time and ageing characteristics of LED and on V-I characteristics were also analysed.

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