砷化镓-镓铝砷双异质结激光器慢退化机理的初步分析

邹元爔

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砷化镓-镓铝砷双异质结激光器慢退化机理的初步分析

更新时间：2025-12-08

- 砷化镓-镓铝砷双异质结激光器慢退化机理的初步分析
- A Preliminary Analysis of the Mechanism of Slow Degradation of GaAs-AlxGa1-xAs DH Lasers
- 电子学报 1980年第1期页码：60-68
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- 纸质出版：1980
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[1]邹元爔.砷化镓-镓铝砷双异质结激光器慢退化机理的初步分析[J].电子学报,1980(01):60-68.

Zou Yuan-xi. A Preliminary Analysis of the Mechanism of Slow Degradation of GaAs-AlxGa1-xAs DH Lasers[J]. Acta Electronica Sinica, 1980, (1): 60-68.
[1]邹元爔.砷化镓-镓铝砷双异质结激光器慢退化机理的初步分析[J].电子学报,1980(01):60-68. DOI：

Zou Yuan-xi. A Preliminary Analysis of the Mechanism of Slow Degradation of GaAs-AlxGa1-xAs DH Lasers[J]. Acta Electronica Sinica, 1980, (1): 60-68. DOI：

摘要

本文首先推论出GaAs-Al

1-x

As双异质结激光器和GaAs

1-x

发光管退化现象的相似性。然后

将后者的慢退化与作者对GaAs提出的结构缺陷模型联系起来

从而推测模型预料的深陷阱的非辐射复合

可能是引起双异质结激光器慢退化的一个重要因素。最后简单地讨论了影响慢退化的一些工艺因素。

Abstract

The mechanism of slow degradation of GaAs-AIxGa1-xAs DH lasers has been analysed on the basis of a defect model proposed by the author in a previous paper. From the analogy between the slow degjadation of GaAs DH lasers and that of the LED’s GaAs

GaAs-AlxGa1-x As and Gap

it ia suggested that GaAs DH lasers and GaAs1-xPx LED’s should degradate by a similar mechanism too.This leads to the conclusion that the traps GaAVGa and As aV a predicated by our model might play an

important role in the slow degradation of GaAs DH lasers. Finally

the effect of some technological factors is discussed in the light of the proposed mechanism of degradation.

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