Channel backscattering technique has been used to investigate pulsed laser and thermal annealing of<111>Si single crystals heavily implanted with Bi. Up to 900℃

thermal annealing residual damage amounts to 35%. But at 750℃

the ratio of substitution of Bi atoms maximizes to 50%. It drops down with the rise of temperature. Outdiffusion of Bi atoms occurs when the annealing temperature exceeds 625℃. However

after pulsed laser annealing

lattice damage almost completely disappeared and Bi atoms are redistributed. The concentration of Bi in Si may exceed its solid solubility by an order of magnitude. 95% of Bi atoms are in substitutional sites. Annealing at different energy has been compared too.