A new method for measuring the noise parameters of a FET/pHEMT device is proposed.By measuring the matched (50 Ω ) noise figure

F

50

based on the intrinsic H-parameters and the intrinsic chain noise matrix C

emA

INT

the linear equation of the gate noise temperature

T

g

and drain noise temperature

T

d

is obtained.The statistic analysis of the

T

g

-T

d

figure is performed at all frequencies range

and then the measured noise temperatures

T

g

and

T

d

are determined.In terms of noise network synthesis theory

the full chain noise matrix C

emA is co

mputed

and the corresponding noise parameters(

F

min

R

emn and Γ

opt

) are determined.The measurements for three FET/ pHEMT devices show that the results are perfectly in accordance with these by means of Garcia and Lázaro.