硅基阻挡杂质带太赫兹探测器及其成像研究

王兵兵; 王晓东; 陈雨璐; 张传胜; 臧元章; 潘鸣; 曹俊诚

doi:10.12263/DZXB.20190791

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硅基阻挡杂质带太赫兹探测器及其成像研究

科研通信 | 更新时间：2025-12-08

- 硅基阻挡杂质带太赫兹探测器及其成像研究
- Study on the Silicon Based Blocked-Impurity-Band Terahertz Detector and Its Application for Imaging
- 电子学报 2021年49卷第9期页码：1867-1872
- 作者机构：
  
  1.中国科学院上海微系统与信息技术研究所中国科学院太赫兹固态技术重点实验室，上海 200050
  2.中国科学院大学材料与光电研究中心，北京 100049
  3.中国电子科技集团公司第五十研究所，上海 200331
- 作者简介：
  
  [ "王兵兵　男，1985年生，安徽颍上人.高级工程师，主要从事太赫兹半导体器件、探测及成像应用等研究工作. E-mail:wbb0308201@163.com" ]
  [ "曹俊诚（通信作者）　男，1967年出生，江西万年人.中国科学院上海微系统与信息技术研究所研究员、博士生导师，长期从事太赫兹（THz）半导体器件及其通信与成像应用等研究工作.E-mail:jccao@mail.sim.ac.cn" ]
- 基金信息：
  
  国家自然科学基金(61705201;61927813;61975225);国家重点研发计划(2017YFA0701005);上海市科学技术委员会(18590780100)
- DOI：10.12263/DZXB.20190791
  中图分类号： O471.5
- 收稿：2019-07-10，
  
  修回：2021-03-03，
  
  纸质出版：2021-09-25
- 稿件说明：
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王兵兵,王晓东,陈雨璐等.硅基阻挡杂质带太赫兹探测器及其成像研究[J].电子学报,2021,49(09):1867-1872.

WANG Bing-bing,WANG Xiao-dong,CHEN Yu-lu,et al.Study on the Silicon Based Blocked-Impurity-Band Terahertz Detector and Its Application for Imaging[J].ACTA ELECTRONICA SINICA,2021,49(09):1867-1872.
王兵兵,王晓东,陈雨璐等.硅基阻挡杂质带太赫兹探测器及其成像研究[J].电子学报,2021,49(09):1867-1872. DOI： 10.12263/DZXB.20190791.

WANG Bing-bing,WANG Xiao-dong,CHEN Yu-lu,et al.Study on the Silicon Based Blocked-Impurity-Band Terahertz Detector and Its Application for Imaging[J].ACTA ELECTRONICA SINICA,2021,49(09):1867-1872. DOI： 10.12263/DZXB.20190791.

摘要

太赫兹探测及成像技术是推动太赫兹科学技术发展的基础和关键.为了实现高灵敏太赫兹探测及成像，设计了一种台面型硅基阻挡杂质带太赫兹探测器，详细介绍了其结构及探测机理，描述了其制备工艺流程，并搭建了黑体响应测试系统.结果表明，4.2K温度条件下，3.8V工作偏压时，探测器峰值响应率可达55A/W，响应频段覆盖6.7~60THz.此外，搭建了一套两维扫描成像系统，实现了高分辨率被动成像.实验结果表明，成像系统空间分辨率可达400μm、温度分辨率约为7.5mK.

Abstract

Terahertz detection and imaging technology are the foundation and key to promote terahertz technology development. In order to realize high sensitivity terahertz detection and imaging

a mesa-type silicon-based blocked-impurity-band (BIB) terahertz detector is designed. The structure and detection mechanism of the detector are introduced in detail. The preparation processes are presented briefly. A series of its photoelectric performances are investigated. A blackbody responsivity test system is built. The results show that at 4.2K temperature and 3.8V bias

its peak responsivity reaches 55A/W

and the response spectrum covers the frequency range from 6.7~60THz. In addition

a scan imaging system is set

and the high-resolution passive imaging is achieved. The imaging result shows that the spatial resolution and the temperature resolution of the imaging system can reach about 400μm and 7.5mK

respectively.

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references

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