1. 合肥工业大学电子科学与应用物理学院,安徽,合肥,230601
2. 合肥工业大学计算机与信息学院,安徽,合肥,230601
3. 安徽工程大学电气工程学院,安徽,芜湖,241000
4. 合肥工业大学电子科学与应用物理学院,安徽,合肥,230601
5. 合肥工业大学计算机与信息学院,安徽,合肥,230601
6. 安徽工程大学电气工程学院,安徽,芜湖,241000
网络出版:2021-02-25,
纸质出版:2021
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黄正峰, 潘尚杰, 曹剑飞, 等. 32nm CMOS工艺三点翻转自恢复锁存器设计[J]. 电子学报, 2021,49(2):394-400.
HUANG Zheng-feng, PAN Shang-jie, CAO Jian-fei, et al. Design of Triple-Node-Upset Self-Recovery Latch in 32nm CMOS Technology[J]. Acta Electronica Sinica, 2021, 49(2): 394-400.
黄正峰, 潘尚杰, 曹剑飞, 等. 32nm CMOS工艺三点翻转自恢复锁存器设计[J]. 电子学报, 2021,49(2):394-400. DOI: 10.12263/DZXB.20200530.
HUANG Zheng-feng, PAN Shang-jie, CAO Jian-fei, et al. Design of Triple-Node-Upset Self-Recovery Latch in 32nm CMOS Technology[J]. Acta Electronica Sinica, 2021, 49(2): 394-400. DOI: 10.12263/DZXB.20200530.
CMOS工艺的特征尺寸不断缩减,电荷共享效应诱发的单粒子三点翻转成为研究热点.本文提出了一种单粒子三点翻转自恢复的抗辐射加固锁存器:Hydra-DICE(Dual Interlocked Storage Cell).该锁存器基于24个同构的交叉耦合单元(Cross-Coupled Elements,CCE)排列成阵列结构.当内部任意三个节点同时发生单粒子翻转时,该锁存器都可以自行恢复到正确的逻辑值.与具有等效三点自恢复能力的TNURL(Triple Node Upset Self-Recoverable Latch)锁存器相比,该Hydra-DICE锁存器面积开销降低50%,延迟降低48.28%,功耗降低25%,功耗延迟积降低61.21%.仿真结果表明,该加固锁存器在容错性能、面积开销、延迟和功耗方面取得了很好的折中.
The feature size of CMOS technology is continuously shrinking
and the single event triple-node-upset induced by the charge sharing effect has become a research hotspot. This paper proposed a single event triple-node-upset self-recovery radiation-hardened latch: Hydra-DICE. The latch is arranged in an array structure based on 24 homogeneous cross-coupled elements (CCE). When a single event upset occurs at any three internal nodes concurrently
Hydra-DICE can realize the function of self-recovery to the correct logical value. Compared with the TNURL latch which has the equivalent triple-node-upset self-recovery capability
the Hydra-DICE latch has a 50% reduction in area overhead
a 48.28% reduction in delay
a 25.00% reduction in power consumption
and a 61.21% reduction in power consumption delay product. The simulation results show that the hardened latch has made a good compromise in fault tolerance performance
area overhead
delay and power.
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