退火温度对基于Bi1.5Zn1.05Nb1.5O7栅绝缘层的ZnO-TFTs性能的影响

张琦; 叶伟; 孙芳莉; 萧生; 杜鹏飞

doi:10.12263/DZXB.20210031

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退火温度对基于Bi_1.5Zn_1.05Nb_1.5O₇栅绝缘层的ZnO-TFTs性能的影响

学术论文 | 更新时间：2025-12-08

- 退火温度对基于Bi_1.5Zn_1.05Nb_1.5O₇栅绝缘层的ZnO-TFTs性能的影响
- Effect of Annealing Temperature on Performance of ZnO-TFTs Based on Bi_1.5Zn_1.05Nb_1.5O₇ Gate Insulator
- 电子学报 2022年50卷第2期页码：455-460
- 作者机构：
  
  1.陕西理工大学机械工程学院，陕西汉中 723001
  2.西北工业集团有限公司，陕西西安 710043
- 作者简介：
  
  [ "张　琦　女，1983年1月生于陕西省汉中市.硕士.现为陕西理工大学机械工程学院讲师.主要研究方向为铁电材料.E-mail: 46604414@qq.com" ]
  [ "叶　伟（通讯作者）　男，1977年5月生于重庆市.博士.现为陕西理工大学机械工程学院副教授，硕士生导师.主要研究方向为电子器件、储能器件、功能材料及换能器技术研究.E-mail: yewei518@163.com" ]
  [ "孙芳莉　女，1975年3月生于陕西省乾县.本科.现为西北工业集团有限公司工程师.主要研究方向为功能材料. E-mail: 522162978@qq.com" ]
  [ "萧　生　男，1994年12月生于重庆市.现为陕西理工大学硕士研究生.主要研究方向为半导体光电子器件.E-mail: xiaosheng1220@qq.com" ]
  [ "杜鹏飞　男，1996年7月生于甘肃庄浪.现为陕西理工大学硕士研究生.主要研究方向为储能材料与器件.E-mail: 2411349154@qq.com" ]
- 基金信息：
  
  陕西省教育厅专项科学研究计划(17JK0144;18JK0151);陕西理工大学人才启动项目(SLGQD2017-19)
- DOI：10.12263/DZXB.20210031
  中图分类号： TN321.5
- 收稿：2020-12-28，
  
  修回：2021-06-19，
  
  纸质出版：2022-02-25
- 稿件说明：
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张琦,叶伟,孙芳莉等.退火温度对基于Bi_1.5Zn_1.05Nb_1.5O₇栅绝缘层的ZnO-TFTs性能的影响[J].电子学报,2022,50(02):455-460.

ZHANG Qi,YE Wei,SUN Fang-li,et al.Effect of Annealing Temperature on Performance of ZnO-TFTs Based on Bi_1.5Zn_1.05Nb_1.5O₇ Gate Insulator[J].ACTA ELECTRONICA SINICA,2022,50(02):455-460.
张琦,叶伟,孙芳莉等.退火温度对基于Bi_1.5Zn_1.05Nb_1.5O₇栅绝缘层的ZnO-TFTs性能的影响[J].电子学报,2022,50(02):455-460. DOI： 10.12263/DZXB.20210031.

ZHANG Qi,YE Wei,SUN Fang-li,et al.Effect of Annealing Temperature on Performance of ZnO-TFTs Based on Bi_1.5Zn_1.05Nb_1.5O₇ Gate Insulator[J].ACTA ELECTRONICA SINICA,2022,50(02):455-460. DOI： 10.12263/DZXB.20210031.

摘要

具有高介电常数的Bi

1.5

1.05

1.5

薄膜存在氧空位和陷阱缺陷，因此，使用Bi

1.5

1.05

1.5

作为栅绝缘层的ZnO-TFTs具有高的界面费米能级钉扎效应和低的电学性能.为了解决这些问题，提高器件性能，本文采用射频磁控溅射制备了以Bi

1.5

1.05

1.5

为栅绝缘层的ZnO-TFTs，同时，详细研究了300℃、400℃、500℃和600℃等退火温度对ZnO-TFTs性能的影响，研究结果表明，随着退火温度的升高，Bi

1.5

1.05

1.5

栅绝缘层和ZnO-TFTs的性能先升高后降低，在退火温度为500℃时，Bi

1.5

1.05

1.5

栅绝缘层和ZnO-TFTs的性能都得到了显著提高，电容密度从165nF/cm

升高到222nF/cm

，开关比从10

升高到10

Abstract

1.5

1.05

1.5

thin films with high dielectric constant have oxygen vacancy and trap defects. Therefore

ZnO-TFTs using Bi

1.5

1.05

1.5

as gate insulator have high interface Fermi level pinning effect and low electrical properties. To solve these problems and improve device performance

ZnO-TFTs with Bi

1.5

1.05

1.5

as gate insulator were prepared by RF magnetron sputtering. Meanwhile

the effect of the annealing temperature from 300℃ to 600℃ at an interval of 100℃ on the performance of ZnO-TFTs was studied. The research results showed that with the increase of annealing temperature

the properties of Bi

1.5

1.05

1.5

gate insulator and ZnO-TFTs increased at first and then decreased. The performance of Bi

1.5

1.05

1.5

gate insulator and ZnO-TFTs was significantly improved at annealing temperature of 500℃. The capacitance density and

off

increased from 165nF/cm

to 222nF/cm

and from 10

to 10

respectively.

关键词

Keywords

references

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