基于表面势的增强型p-GaN HEMT器件模型

葛晨; 李胜; 张弛; 刘斯扬; 孙伟锋

doi:10.12263/DZXB.20210737

您当前的位置：

首页 >

文章列表页 >

基于表面势的增强型p-GaN HEMT器件模型

学术论文 | 更新时间：2025-12-08

- 基于表面势的增强型p-GaN HEMT器件模型
- Surface Potential Based E-mode p-GaN HEMT Device Model
- 电子学报 2022年50卷第5期页码：1227-1233
- 作者机构：
  
  1.东南大学微电子学院，江苏无锡 214000
  2.东南大学电子科学与工程学院，江苏南京 210096
- 作者简介：
  
  [ "葛晨　女,1997年5月出生于江苏宿迁.现为东南大学微电子学院研究生.研究方向为功率半导体器件可靠性.E‑mail: 220194942@seu.edu.cn" ]
  [ "李胜　男,1993年4月出生于湖北随州.2016年获得郑州大学电子科学与技术专业学士学位.现为东南大学国家ASIC系统工程研究中心微电子学与固态电子学博士.主要研究方向为GaN功率器件的可靠性和建模.E‑mail: seulisheng@seu.edu.cn" ]
  [ "张弛　男,1995年9月出生于江苏扬州.2017年获得合肥工业大学电子科学与技术学士学位.现为东南大学国家ASIC系统工程研究中心微电子与固态电子学博士.主要研究方向为GaN功率器件设计与可靠性.E‑mail: galazhang@seu.edu.cn" ]
  [ "刘斯扬男,1987年5月出生于安徽合肥.现为东南大学电子科学与工程学院教授、博士生导师.主要研究方向为新型功率器件设计、功率集成电路设计和功率器件建模.E⁃mail: liusy2017@seu.edu.cn" ]
  [ "孙伟锋　男,1977年5月出生于江苏武进.现为东南大学电子科学与工程学院教授、博士生导师.主要研究方向为新型功率器件设计、功率集成电路设计、功率器件建模和射频器件设计.E‑mail: swffrog@seu.edu.cn" ]
- 基金信息：
  
  国家重点研发计划(2020YFF0218501);江苏省科技成果转化基金(BA2020027);东南大学至善学者(2238185478)
- DOI：10.12263/DZXB.20210737
  中图分类号： TN389
- 收稿：2021-06-10，
  
  修回：2021-10-22，
  
  纸质出版：2022-05-25
- 稿件说明：
移动端阅览
葛晨,李胜,张弛等.基于表面势的增强型p-GaN HEMT器件模型[J].电子学报,2022,50(05):1227-1233.

GE Chen,LI Sheng,ZHANG Chi,et al.Surface Potential Based E-mode p-GaN HEMT Device Model[J].ACTA ELECTRONICA SINICA,2022,50(05):1227-1233.
葛晨,李胜,张弛等.基于表面势的增强型p-GaN HEMT器件模型[J].电子学报,2022,50(05):1227-1233. DOI： 10.12263/DZXB.20210737.

GE Chen,LI Sheng,ZHANG Chi,et al.Surface Potential Based E-mode p-GaN HEMT Device Model[J].ACTA ELECTRONICA SINICA,2022,50(05):1227-1233. DOI： 10.12263/DZXB.20210737.

摘要

为了满足功率电路及系统设计对p-GaN HEMT（High Electron Mobility Transistor）器件模型的需求，本文建立了一套基于表面势计算方法的增强型p-GaN HEMT器件SPICE（Simulation Program with Integrated Circuit Emphasis）模型.根据耗尽型GaN HEMT器件和增强型p-GaN HEMT器件结构的对比，推导出p-GaN栅结构电压解析公式.考虑到p-GaN栅掺杂效应和物理机理，推导出栅电容和栅电流解析公式.同时，与基于表面势的高电子迁移率晶体管高级SPICE模型内核相结合，建立完整的增强型p-GaN HEMT功率器件的SPICE模型.将所建立的SPICE模型与实测结果进行对比验证.结果表明，所建立的模型准确实现了包括转移特性、输出特性、栅电容以及栅电流在内的p-GaN HEMT器件的电学特性.模型仿真数据与实测数据拟合度误差均小于5%.本文所提出的增强型p-GaN HEMT器件模型在进行电路设计时具有重要的应用价值.

Abstract

To meet the requirements for the power circuit and system design for enhancement-mode p-GaN HEMT(High Electron Mobility Transistor) device SPICE(Simulation Program with Integrated Circuit Emphasis) models

a model of enhancement-mode p-GaN HEMT device based on the surface potential calculation method is proposed in the paper. According to the comparison between the structures of the depletion-mode GaN HEMT device and the enhancement-mode p-GaN HEMT device

analytical formulas for the voltage of the p-GaN gate structure are derived. Considering the doping effect of p-GaN gate and physical mechanism

analytical formulas for the gate current and gate capacitance are derived. At the same time

combined with the ASM(Advanced SPICE Model) core

a complete SPICE model of enhancement-mode p-GaN HEMT power device is established. The established SPICE model is compared and verified with the measured results. The results show that the proposed model accurately realizes the electrical characteristics of p-GaN HEMT device including transfer characteristics

output characteristics

gate capacitance

and gate current. The simulation data of the model fits the measured data of the actual enhancement-mode p-GaN HEMT device well

and the fitting errors of the model simulation data and the measured data are less than 5%. The enhancement-mode p-GaN HEMT device model proposed in the paper

which is based on the perfect ASM-HEMT and considers the doping effect of p-GaN layer and physical mechanism of p-GaN gate structure

has important application value in circuit design.

关键词

Keywords

references

JOHNSON J , CAO D , LYU X , et al . GaN based inverter with high conversion ratio and sinusoidal output for motor drive applications stress analysis [C]//BOB KAPLAR. 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications(WiPDA) . Albuquerque : IEEE , 2017 : 195 ‑ 200 .

YANG S , ZHOU C , HAN S , et al . Impact of substrate bias polarity on buffer‑related current collapse in AlGaN/GaN‑on‑Si power devices [J]. IEEE Transactions on Electron Devices , 2017 , 64 ( 12 ): 5048 ‑ 5056 .

MURUKESAN K , EFTHYMIOU L , UDREA F . Gate stress induced threshold voltage instability and its significance for reliable threshold voltage measurement in p‑GaN HEMT [C]//VICTOR VELIADIS. 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications(WiPDA) . Raleigh : IEEE , 2019 : 177 ‑ 180 .

YOU S , LI X , DECOUTERE S , et al . Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET(MVSG) compact model for enhancement‑ mode p‑GaN gate power HEMTs, logic transistors and resistors [C]//DEMINS RIDEAU. ESSDERC 2019‑49th European Solid‑State Device Research Conference(ESSDERC) . Cracow : IEEE , 2019 : 158 ‑ 161 .

RADHAKRISHNA U , CHOI P , ANTONIADIS D A . Facilitation of GaN‑based RF‑ and HV‑circuit designs using MVS‑GaN HEMT compact model [J]. IEEE Transactions on Electron Devices , 2019 , 66 ( 1 ): 95 ‑ 105 .

MAHAJAN D , KHANDELWAL S . Impact of p‑GaN layer doping on switching performance of enhancement mode GaN devices [C]//CURRAN. 2018 IEEE 19th Workshop on Control and Modeling for Power Electronics(COMPEL) . Padua : IEEE , 2018 : 1 ‑ 4 .

MODOLO N , TANG S W , JIANG H J , et al . A novel physics‑based approach to analyze and model E‑mode p‑GaN power HEMTs [J]. IEEE Transactions on Electron Devices , 2021 , 68 ( 4 ): 1489 ‑ 1494 .

KHANDELWAL S , CHAUHAN Y S , FJELDLY T A . Analytical modeling of surface‑potential and intrinsic charges in AlGaN/GaN HEMT devices [J]. IEEE Transactions on Electron Devices , 2012 , 59 ( 10 ): 2856 ‑ 2860 .

DASGUPTA A , GHOSH S , AHSAN S A , et al . Modeling DC, RF and noise behavior of GaN HEMTs using ASM‑HEMT compact model [C]//YOGESH VERMA. 2016 IEEE MTTS International Microwave and RF Conference(IMaRC) . New Delhi : IEEE , 2016 : 1 ‑ 4 .

DASGUPTA A , GHOSH S , CHAUHAN Y S , et al . ASM‑HEMT: compact model for GaN HEMTs [C]//JUIN J LIOU. 2015 IEEE International Conference on Electron Devices and Solid‑State Circuits(EDSSC) . Singapore : IEEE , 2015 : 495 ‑ 498 .

WU T L , BAKEROOT B , LIANG H , et al . Analysis of the gate capacitance—voltage characteristics in p‑GaN/AlGaN/GaN heterostructures [J]. Electron Device Letters IEEE , 2017 , 38 ( 12 ): 1696 ‑ 1699 .

WANG J , CHEN Z , YOU S , et al . Surface‑potential‑ based compact model for the gate current of p‑GaN gate HEMTs [J]. IEEE Transactions on Electron Devices , 2020 , 67 ( 9 ): 3564 ‑ 3567 .

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

Si/SiGe/Si双异质结晶体管(HBT)的负阻特性