用于5G通信的射频微系统与天线一体化三维扇出型集成封装

夏晨辉; 王刚; 王波; 明雪飞

doi:10.12263/DZXB.20210991

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用于5G通信的射频微系统与天线一体化三维扇出型集成封装

学术论文 | 更新时间：2025-12-08

- 用于5G通信的射频微系统与天线一体化三维扇出型集成封装
- Integrated 3D Fan-Out Package of RF Microsystem and Antenna for 5G Communication
- 电子学报 2023年51卷第6期页码：1572-1580
- 作者机构：
  
  中国电子科技集团公司第五十八研究所，江苏无锡 214035
- 作者简介：
  
  [ "夏晨辉男，1992年出生，河南人.中国电子科技集团公司第五十八研究所工程师.主要研究方向为异质异构微系统集成、射频天线一体化、三维集成先进封装技术等.E-mail: smartxvip@163.com" ]
  [ "王刚（通讯作者）男，1986 年出生，山西人. 中国电子科技集团公司第五十八研究所工程师高级工程师 . 主要研究方向 MEMS、微系统、晶圆级封装技术等.E-mail: wanggang_cetc@126.com" ]
- 基金信息：
- DOI：10.12263/DZXB.20210991
  中图分类号： TN305.94;TN453
- 收稿：2021-07-28，
  
  修回：2023-03-28，
  
  纸质出版：2023-06-25
- 稿件说明：
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夏晨辉,王刚,王波等.用于5G通信的射频微系统与天线一体化三维扇出型集成封装[J].电子学报,2023,51(06):1572-1580.

XIA Chen-hui,WANG Gang,WANG Bo,et al.Integrated 3D Fan-Out Package of RF Microsystem and Antenna for 5G Communication[J].ACTA ELECTRONICA SINICA,2023,51(06):1572-1580.
夏晨辉,王刚,王波等.用于5G通信的射频微系统与天线一体化三维扇出型集成封装[J].电子学报,2023,51(06):1572-1580. DOI： 10.12263/DZXB.20210991.

XIA Chen-hui,WANG Gang,WANG Bo,et al.Integrated 3D Fan-Out Package of RF Microsystem and Antenna for 5G Communication[J].ACTA ELECTRONICA SINICA,2023,51(06):1572-1580. DOI： 10.12263/DZXB.20210991.

摘要

本文研究了一种用于5G通信的射频微系统与天线一体化三维扇出型集成封装技术.通过在玻璃晶圆上使用双面布线工艺，实现毫米波天线阵列的制作.将TSV转接芯片与射频芯片倒装焊在玻璃晶圆上，再用树脂材料进行注塑，将玻璃晶圆与异构芯片重构成玻璃与树脂永久键合的晶圆.减薄树脂晶圆面漏出TSV转接芯片的铜柱，在树脂表面上完成再布线.把控制、电源管理等芯片倒装焊在再布线形成的焊盘处，植上BGA焊球形成最终封装体.利用毫米波探针台对射频传输线的损耗进行测量，结果表明，1 mm长的CPW传输线射频传输损耗在60 GHz仅为0.6 dB.在玻璃晶圆上设计了一种缝隙耦合天线，天线在59.8 GHz的工作频率最大增益达到6 dB.这为5G通信的射频微系统与天线一体化三维扇出型集成提供了一个切实可行的解决方案.

Abstract

A 3D fan-out packaging method for the integration of 5G communication radio frequency (RF) microsystem and antenna is studied. Through the double-sided wiring technology on the glass wafer

the fabrication of millimeter wave antenna array is realized. Then the low power devices such as through silicon via (TSV) transfer chips and RF chips are flip-welded on the glass wafer

and the glass wafer is reformed into a wafer permanently bonded with glass and resin by the injection molding process with resin material. The thinning resin surface leaks out of the TSV transfer chip

and the rewiring is carried out on the resin surface

and then the control

power management and other devices are flip-welded on the pad formed by RDL. Ball grid array (BGA) is implanted to form the final package. The loss of the RF transmission line is measured by using the RF millimeter wave probe table. The results show that the RF transmission loss from the chip end to the antenna end in the fan-out package is very small

and it is only 0.6 dB when working in 60 GHz. A slot coupling antenna is designed on the glass wafer. The antenna can operate at 59.8 GHz and the maximum gain can reach 6 dB within the working bandwidth. This demonstration successfully provides a feasible solution for the 3D fan-out integration of RF microsystem and antenna in 5G communication.

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references

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