ZnO NW栅极GaN HEMT紫外光探测性能

朱彦旭; 谭张杨; 王晓冬

doi:10.12263/DZXB.20211634

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ZnO NW栅极GaN HEMT紫外光探测性能

学术论文 | 更新时间：2025-12-08

- ZnO NW栅极GaN HEMT紫外光探测性能
- UV Detection Performance of ZnO NW Gate GaN HEMT Research
- 电子学报 2023年51卷第9期页码：2510-2516
- 作者机构：
  
  1.北京工业大学光电子技术教育部重点实验室，北京 100124
  2.中国人民警察大学警务装备技术学院，河北廊坊 102308
- 作者简介：
  
  [ "朱彦旭男，1970年1月出生于河北省秦皇岛市，现为北京工业大学副教授、硕士生导师，主要研究方向为GaN HEMT 器件、发光二极管、激光器、太阳能电池等半导体器件." ]
  [ "谭张杨女，1998年9月出生于湖北省荆州市，现为北京工业大学硕士研究生，主要研究方向为GaN HEMT紫外探测." ]
  [ "王晓冬（通讯作者）男，1977年11月出生于河北省保定市，现为中国人民警察大学副教授，主要研究方向为MEMS力学传感器的设计." ]
- 基金信息：
  
  国家重点研发计划资助项目(2017YFB0402803)
- DOI：10.12263/DZXB.20211634
  中图分类号： TN23
- 收稿：2021-12-08，
  
  修回：2022-04-26，
  
  纸质出版：2023-09-25
- 稿件说明：
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朱彦旭,谭张杨,王晓冬.ZnO NW栅极GaN HEMT紫外光探测性能[J].电子学报,2023,51(09):2510-2516.

ZHU Yan-xu,TAN Zhang-yang,WANG Xiao-dong.UV Detection Performance of ZnO NW Gate GaN HEMT Research[J].ACTA ELECTRONICA SINICA,2023,51(09):2510-2516.
朱彦旭,谭张杨,王晓冬.ZnO NW栅极GaN HEMT紫外光探测性能[J].电子学报,2023,51(09):2510-2516. DOI： 10.12263/DZXB.20211634.

ZHU Yan-xu,TAN Zhang-yang,WANG Xiao-dong.UV Detection Performance of ZnO NW Gate GaN HEMT Research[J].ACTA ELECTRONICA SINICA,2023,51(09):2510-2516. DOI： 10.12263/DZXB.20211634.

摘要

本文实验采用水热生长法，成功制备了以ZnO纳米线为光感应栅极的高电子迁移率晶体管HEMT（High Electron Mobility Transistor）器件.对HEMT进行源漏（S/D）下刻蚀，刻蚀深度为120/150 nm，探究不同S/D刻蚀深度对器件性能的影响.同时，利用磁控溅射法在栅电极沉积ZnO晶籽层，在80℃温度下控制水热生长时间分别为6/8/10 h，探究不同水热生长时间对ZnO纳米线表面形貌以及HEMT紫外探测性能的影响.结果表明，相较于常规结构器件，ZnO纳米线栅极器件在350~450 nm波长范围内具有更高的光吸收率.同样的水热生长时间下，刻蚀深度为150 nm时源漏饱和电流相较于120 nm器件较小，但黑暗/紫外光照下的饱和电流差值更大，最大达到了8 mA，对紫外光表现出更高的探测效率.水热生长时间控制为6 h时纳米线生长形貌良好，且在该生长时间下刻蚀深度为150 nm时，器件光响应/恢复时间达到了最小值，分别为0.005 7 s、2.128 s.

Abstract

A high electron mobility transistor (HEMT) device with ZnO nanowires as light sensing gate is successfully prepared by hydrothermal growth method. The HEMT is etched under source drain (S/D) with an etching depth of 120/150 nm to explore the effects of different S/D etching depths on the device performance. At the same time

ZnO crystal seed layer is deposited on the gate electrode by magnetron sputtering. The hydrothermal growth time is controlled to 6/8/10 h at 80℃ to explore the effects of different hydrothermal growth time on the surface morphology of ZnO nanowires and the UV detection performance of HEMT. The results show that compared with conventional devices

ZnO nanowire gate devices have higher optical absorptivity in the wavelength range of 350~450 nm. Under the same hydrothermal growth time

when the etching depth is 150 nm

the source drain saturation current is smaller than that of 120 nm

but the saturation current difference under dark/ultraviolet light is larger

up to 8 mA

showing higher detection efficiency for ultraviolet light. When the hydrothermal growth time is controlled to 6 h

the growth morphology of nanowires is good

and when the etching depth is 150 nm

the optical response/recovery time of the device reaches the minimum

which are 0.005 7 s and 2.128 s respectively.

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Keywords

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AlGaN/GaN 高电子迁移率晶体管解析模型