关于3D堆叠MRAM热学分析方法的研究
Research on Thermal Analysis Method of 3D-stacked MRAM
- 电子学报 2023年51卷第10期 页码：2775-2782
- 作者机构：
江南大学物联网工程学院，江苏无锡 214122
- 作者简介：
[ "永若雪 女，1996年生，新疆乌鲁木齐人.江南大学物联网工程学院硕士研究生.主要研究方向为集成电路设计和存储器设计等. E-mail: yrx18140730408@163.com" ]
[ "姜岩峰（通讯作者） 男，1972年生，甘肃白银人.江南大学物联网工程学院教授.主要研究方向为集成电路设计、功率半导体器件和磁性器件等." ]
- 基金信息：国家自然科学基金(61774078)
DOI：10.12263/DZXB.20220275
中图分类号： TN4;收稿：2022-03-18，
修回：2022-11-08，
纸质出版：2023-10-25
- 稿件说明：
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永若雪,姜岩峰.关于3D堆叠MRAM热学分析方法的研究[J].电子学报,2023,51(10):2775-2782.
YONG Ruo-xue,JIANG Yan-feng.Research on Thermal Analysis Method of 3D-stacked MRAM[J].ACTA ELECTRONICA SINICA,2023,51(10):2775-2782.
永若雪,姜岩峰.关于3D堆叠MRAM热学分析方法的研究[J].电子学报,2023,51(10):2775-2782. DOI： 10.12263/DZXB.20220275.
YONG Ruo-xue,JIANG Yan-feng.Research on Thermal Analysis Method of 3D-stacked MRAM[J].ACTA ELECTRONICA SINICA,2023,51(10):2775-2782. DOI： 10.12263/DZXB.20220275.
摘要
本文针对3D堆叠磁随机存储器（Magnetic Random Access Memory，MRAM）的热学分析问题，在有限元法和热阻网络法的基础上，提出了一种局部等效法，可高精度并且快速地分析3D堆叠MRAM的热学分布.与有限元法相比，该方法使用直观方便，克服了有限元法建模与求解复杂耗时的问题；与热阻网络法相比，局部等效法具有保持较高精度的特点，解决了热阻网络法针对带夹层和硅通孔（Through Silicon Via，TSV）的复杂封装问题时存在较大误差的问题.对比结果表明，使用本文提出的方法得出的各叠层的上表面温度误差均小于0.05 °C，精度与有限元法一致，并且更便捷高效.同时对应的建模结构简单，避免了热阻网络法将含铜柱的夹层和含铜柱的硅层分开考虑的不准确性.本文的研究可为未来多层3D堆叠MRAM热学特性相关的设计与分析提供指导.
Abstract
In this paper
a local equivalent method is proposed for thermal analysis of 3D-stacked magnetic random access memory (MRAM). The method is based on combination of two general methods of thermal analysis
including the finite element method and the thermal resistance network method. On one hand
the method can be easily applied on the thermal analysis for 3D MRAM
overcoming the complex and time-consuming problem of modeling and solving when using the finite element method. On the other hand
the method shows high accuracy on the complex package 3D MRAM with multiple interlayers and TSVs
solving the problem of inaccuracy of the thermal resistance network method. Comparing the results between the local equivalent method and the finite element method
it can be found that the temperature error of the upper surface of each layer obtained by the proposed method is less than 0.05 °C
with the benefits of higher efficiency with less simulation time. Moreover
compared with the thermal resistance network method
the proposed method shows higher accuracy. The main error of the thermal resistance network method comes from the fact that the interlayer and the silicon layer related to the copper pillar have to be modeled separately. The local equivalent method can avoid the problem and improve the accuracy. The proposed method can provide guidance for the design and analysis related to the thermal properties of multi-layer 3D-stacked MRAM.
关键词
Keywords
references
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