1.电子科技大学电子科学与工程学院,四川成都 611731
2.厦门大学电子科学与技术学院,福建厦门 361005
[ "刘广儒 男,2000年2月出生,山西晋中人.现为电子科技大学硕士研究生.主要研究方向为毫米波/太赫兹集成电路和系统.E-mail: guangru.liu@qq.com" ]
[ "张勇(通讯作者) 男,1975年9月出生,四川南充人.2004年获电子科技大学博士学位.电子科技大学教授,博士生导师.IEEE高级会员.四川省海外高层次留学人才,入选第十二批电子科技大学“百人计划”,入选第七批国家高层次人才.主要研究方向为微波与毫米波集成电路、固态太赫兹技术等.中国电子学会会员编号:E190029499M." ]
[ "朱华利 男,1995年8月出生,四川荣县人.现为电子科技大学博士研究生.主要研究方向为微波/毫米波电路理论和技术、毫米波/太赫兹集成电路和系统.E-mail: hlzhu@std.uestc.edu.cn" ]
收稿:2022-11-01,
修回:2023-02-28,
纸质出版:2023-10-25
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刘广儒,张勇,朱华利等.基于石墨烯-VO2的可重构太赫兹超宽带吸波器[J].电子学报,2023,51(10):2700-2707.
LIU Guang-ru,ZHANG Yong,ZHU Hua-li,et al.Ultra-Wideband Reconfigurable Terahertz Absorber Based on Graphene-VO2[J].ACTA ELECTRONICA SINICA,2023,51(10):2700-2707.
刘广儒,张勇,朱华利等.基于石墨烯-VO2的可重构太赫兹超宽带吸波器[J].电子学报,2023,51(10):2700-2707. DOI: 10.12263/DZXB.20221242.
LIU Guang-ru,ZHANG Yong,ZHU Hua-li,et al.Ultra-Wideband Reconfigurable Terahertz Absorber Based on Graphene-VO2[J].ACTA ELECTRONICA SINICA,2023,51(10):2700-2707. DOI: 10.12263/DZXB.20221242.
本文提出了一种基于石墨烯和二氧化钒(VO
2
)的伞状结构可重构太赫兹超宽带吸波器,极大地拓展了太赫兹吸波器的吸收带宽,具有功能可重构、调制深度大等优点.该吸波器由伞状VO
2
贴片、聚乙烯环烯烃共聚物(Topas)介电层、石墨烯层以及金属反射层组成.当VO
2
处于绝缘态、石墨烯的费米能级为0 eV时,该吸波器在整个太赫兹波段内表现为全反射特性.当VO
2
处于金属态、石墨烯的费米能级为0.75 eV时,该吸波器在3.57~10 THz频率范围内实现了超宽带吸收,平均吸收率达到了94%以上,吸收带宽高达6.43 THz.同时调节VO
2
的电导率和石墨烯的费米能级,可在两个完美吸收点处实现最大分别为97.9%(4.3 THz处)、96.8%(8.25 THz处)的调制深度,具有良好的开关特性.此外,该吸波器还具有极化不敏感和广角吸收特性,在
<math id="M1"><msup><mrow><mn mathvariant="normal">0</mn></mrow><mrow><mo>°</mo></mrow></msup><mo>~</mo><msup><mrow><mn mathvariant="normal">35</mn></mrow><mrow><mo>°</mo></mrow></msup></math>
https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=51179466&type=
https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=51179463&type=
8.12800026
2.53999996
的入射角范围内,该吸波器在3.57~10 THz带宽范围内均保持着90%以上的吸收率.该可重构太赫兹超宽带吸波器在可调宽带吸收器件、隐身器件、热探测、太赫兹开关等领域具有潜在的应用价值.
In this paper
a reconfigurable terahertz ultra-wideband absorber with umbrella structure based on graphene and vanadium dioxide is proposed
which greatly expands the absorption bandwidth of the terahertz absorber and has the advantages of functional reconfiguration and large modulation depth. The absorber consists of an umbrella shaped VO
2
patch
a polyethylene cycloolefin copolymer (Topas) dielectric layer
graphene layer
and a metallic reflector. When VO
2
is in the insulating state and the Fermi level of graphene is 0 eV
the absorber exhibits total reflection characteristics in the whole terahertz band. When VO
2
is in the metal state and the Fermi level of graphene is 0.75 eV
the absorber achieves ultra-wideband absorption in the frequency range of 3.57~10 THz
with an average absorption rate of more than 94% and an absorption bandwidth of up to 6.43 THz. By adjusting the conductivity of VO
2
and the Fermi level of graphene at the same time
the maximum modulation depth of 97.9% (at 4.3 THz) and 96.8% (at 8.25 THz) can be achieved at the two perfect absorption points
which has good switching characteristics. In addition
the absorber has polarization insensitivity and wide-angle absorption characteristics. In the range of 0~35°
the absorptivity of the absorber is more than 90% in the range of 3.57~10 THz bandwidth. The ultra-wideband reconfigurable terahertz absorber will have potential applications in tunable broadband absorber
stealth devices
thermal detection
terahertz switches and other fields.
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