栅宽对AlGaN/GaN HEMTs亚阈值摆幅的影响

季启政; 刘峻; 杨铭; 马贵蕾; 胡小锋; 刘尚合

doi:10.12263/DZXB.20230004

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栅宽对AlGaN/GaN HEMTs亚阈值摆幅的影响

学术论文 | 更新时间：2025-12-08

- 栅宽对AlGaN/GaN HEMTs亚阈值摆幅的影响
- Gate Width Influence on Subthreshold Swing of AlGaN/GaN HEMTs
- 电子学报 2023年51卷第6期页码：1486-1492
- 作者机构：
  
  1.陆军工程大学石家庄校区电磁环境效应重点实验室,河北石家庄 050003
  2.北京卫星环境工程研究所,北京 100094
  3.南京信息工程大学电子与信息工程学院,江苏南京 210044
  4.北京东方计量测试研究所,北京 100094
- 作者简介：
  
  [ "季启政男，1979年出生，安徽无为人.现为陆军工程大学石家庄校区电磁环境效应重点实验室博士生.主要研究方向为微电子器件与电磁防护.E-mail: qzhji@sina.com" ]
  [ "刘峻男，1998年出生，江苏盐城人.现为南京信息工程大学电子与信息工程学院硕士研究生.主要研究方向为GaN半导体功率器件.E-mail: 1414294528@qq.com" ]
  [ "刘尚合（通讯作者）男，1937年出生，山西闻喜人.现为陆军工程大学教授、中国工程院院士.主要研究方向为静电与电磁防护、电磁环境效应." ]
- 基金信息：
  
  国家自然科学基金(61904007)
- DOI：10.12263/DZXB.20230004
  中图分类号： TN386.3;
- 收稿：2022-12-27，
  
  修回：2023-02-09，
  
  纸质出版：2023-06-25
- 稿件说明：
移动端阅览
季启政,刘峻,杨铭等.栅宽对AlGaN/GaN HEMTs亚阈值摆幅的影响[J].电子学报,2023,51(06):1486-1492.

JI Qi-zheng,LIU Jun,YANG Ming,et al.Gate Width Influence on Subthreshold Swing of AlGaN/GaN HEMTs[J].ACTA ELECTRONICA SINICA,2023,51(06):1486-1492.
季启政,刘峻,杨铭等.栅宽对AlGaN/GaN HEMTs亚阈值摆幅的影响[J].电子学报,2023,51(06):1486-1492. DOI： 10.12263/DZXB.20230004.

JI Qi-zheng,LIU Jun,YANG Ming,et al.Gate Width Influence on Subthreshold Swing of AlGaN/GaN HEMTs[J].ACTA ELECTRONICA SINICA,2023,51(06):1486-1492. DOI： 10.12263/DZXB.20230004.

摘要

制备了不同栅极宽度的AlGaN/GaN高电子迁移率晶体管，通过测量各器件电容-电压曲线和转移特性曲线，得到了栅沟道载流子输运特性以及亚阈值摆幅，结果显示当栅极宽度从10 μm增加到50 μm时，亚阈值摆幅下降了40.3%.定性且定量地分析了亚阈值摆幅值随栅极宽度变化的原因，发现不同的栅极宽度对应不同的极化散射强度，亚阈值摆幅的变化是由栅沟道载流子输运特性和极化散射效应造成的.为AlGaN/GaN高电子迁移率晶体管开关性能优化提供了新的视角与维度，将促进其更好地应用于无线通信、电力传输以及国防军工领域.

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) with different gate widths are prepared. The gate-channel carrier transport characteristics and the subthreshold swing (SS) are obtained by measuring the capacitance-voltage curve and transfer characteristic curve of each HEMT. The results show that the SS value decreases by 40.3% with gate width increasing from 10

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. The factors affecting the subthreshold swing variation are analyzed qualitatively and quantificationally. It is found that different gate widths correspond to different polarization scattering intensity

and the SS behavior results from gate-channel carrier transport characteristics and polarization scattering effect. This provides a new perspective and dimension for AlGaN/GaN HEMTs switching performance optimization

which will promote its better application in wireless communication

power transmission and defense industry.

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Keywords

references

NGUYEN H Q , NGUYEN T , TANNER P , et al . Piezotronic effect in a normally off p-GaN/AlGaN/GaN HEMT toward highly sensitive pressure sensor [J]. Applied Physics Letters , 2021 , 118 ( 24 ): 242104 .

NARANG K , BAG R K , SINGH V K , et al . Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT [J]. Journal of Alloys and Compounds , 2020 , 815 : 152283 .

MOON J S , WONG J , GRABAR B , et al . 360 GHz fMAX graded-channel AlGaN/GaN HEMTs for mmW low-noise applications [J]. IEEE Electron Device Letters , 2020 , 41 ( 8 ): 1173 - 1176 .

敬小东 , 王海龙 , 游飞 , 等 . 星载大功率GaN固态功放寿命评估方法 [J]. 航天器环境工程 , 2021 , 38 ( 4 ): 420 - 425 .

JING X D , WANG H L , YOU F , et al . Method for life evaluation of spaceborne high power GaN solid state power amplifier [J]. Spacecraft Environment Engineering , 2021 , 38 ( 4 ): 420 - 425 . (in Chinese)

季启政 , 刘峻 , 杨铭 , 等 . AlGaN/GaN HEMT质子辐射效应研究进展 [J]. 航天器环境工程 , 2022 , 39 ( 4 ): 436 - 445 .

JI Q Z , LIU J , YANG M , et al . Review of proton irradiation effect to AlGaN/GaN HEMT [J]. Spacecraft Environment Engineering , 2022 , 39 ( 4 ): 436 - 445 . (in Chinese)

LEE H P , BAYRAM C . Improving Current ON/OFF ratio and subthreshold swing of Schottky- gate AlGaN/GaN HEMTs by postmetallization annealing [J]. IEEE Transactions on Electron Devices , 2020 , 67 ( 7 ): 2760 - 2764 .

KIM K , KIM T J , ZHANG H L , et al . AlGaN/GaN Schottky-gate HEMTs with UV/O₃-treated gate interface [J]. IEEE Electron Device Letters , 2020 , 41 ( 10 ): 1488 - 1491 .

DEGUCHI T , KIKUCHI T , ARAI M , et al . High on/off current ratio p-InGaN/AlGaN/GaN HEMTs [J]. IEEE Electron Device Letters , 2012 , 33 ( 9 ): 1249 - 1251 .

YANG L , MI M H , HOU B , et al . Improvement of subthreshold characteristic of gate-recessed AlGaN/GaN transistors by using dual-gate structure [J]. IEEE Transactions on Electron Devices , 2017 , 64 ( 10 ): 4057 - 4064 .

YUAN L , CHEN H W , CHEN K J . Normally off AlGaN/GaN metal - 2DEG tunnel-junction field-effect transistors [J]. IEEE Electron Device Letters , 2011 , 32 ( 3 ): 303 - 305 .

CUI P , LIU H , LIN W , et al . Influence of different gate biases and gate lengths on parasitic source access resistance in AlGaN/GaN heterostructure FETs [J]. IEEE Transactions on Electron Devices , 2017 , 64 ( 3 ): 1038 - 1044 .

LV Y J , LIN Z J , MENG L G , et al . Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors [J]. Nanoscale Research Letters , 2012 , 7 ( 1 ): 434 .

LIU Y , LIN Z J , YANG M , et al . Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors [J]. Modern Physics Letters B , 2016 , 30 ( 35 ): 1650411 .

YANG M , JI Q Z , SU X G , et al . Study on the electron mobility related with ohmic contact width in AlGaN/GaN HEMTs [J]. Modern Physics Letters B , 2020 , 34 ( Supp01 ): 2150008 .

ZHAO J Z , LIN Z J , CORRIGAN T D , et al . Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN∕GaN heterostructures [J]. Applied Physics Letters , 2007 , 91 ( 17 ): 173507 .

左磊召 . 小尺寸MOS器件阈值电压的三维建模与仿真研究 [D]. 南京 : 南京邮电大学 , 2011 .

ZUO L Z . 3-D Analytical Model and Simulation Technologies of Threshold Voltage in MOS Transistors Considering the Small Geometry Effects [D]. Nanjing : Nanjing University of Posts and Telecommunications , 2011 . (in Chinese)

LV Y J , LIN Z J , ZHANG Y , et al . Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors [J]. Applied Physics Letters , 2011 , 98 ( 12 ): 123512 .

SONG W J , LI Y , ZHANG K , et al . Steep subthreshold swing in GaN negative capacitance field-effect transistors [J]. IEEE Transactions on Electron Devices , 2019 , 66 ( 10 ): 4148 - 4150 .

汤庭鳌 , 王晓晖 , 郑大卫 . MOS场效应管的新的电流公式 [J]. 半导体学报 , 1994 , 15 ( 10 ): 686 - 693 .

TANG T A , WANG X H , ZHENG D W . Advanced Current characteristics of MOS field effect transistors [J]. Chinese Journal of Semiconductors , 1994 , 15 ( 10 ): 686 - 693 . (in Chinese)

KUCHTA D , WOJTASIAK W . A DC analytical AlGaN/GaN HEMT model for transistor characterisation [C]// 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) . Krakow : IEEE , 2016 : 1 - 4 .

YANG M , LV Y J , FENG Z H , et al . Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors [J]. Journal of Applied Physics , 2016 , 119 ( 22 ): 224501 .

LUAN C B , LIN Z J , LV Y J , et al . Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors [J]. Journal of Applied Physics , 2014 , 116 ( 4 ): 044507 .

GURUSINGHE M N , DAVIDSSON S K , ANDERSSON T G . Two-dimensional electron mobility limitation mechanisms in Al x Ga 1– x N∕GaN heterostructures [J]. Physical Review B , 2005 , 72 ( 4 ): 045316 .

GELMONT B L , SHUR M , STROSCIO M . Polar optical-phonon scattering in three- and two-dimensional electron gases [J]. Journal of Applied Physics , 1995 , 77 ( 2 ): 657 - 660 .

HIRAKAWA K , SAKAKI H . Mobility of the two-dimensional electron gas at selectively doped n-type Al x Ga 1- x As/GaAs heterojunctions with controlled electron concentrations [J]. Physical Review . B, Condensed Matter, 1986 , 33 ( 12 ): 8291 - 8303 .

YANG M , LV Y , CUI P , et al . Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors [J]. Journal of Physics and Chemistry of Solids , 2018 , 123 : 223 - 227 .

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