基于复合左右手理论的双模态低损耗宽带毫米波片上传输线
Millimeter-Wave On-Chip Dual-Mode Transmission Line with Low Insertion Loss and Wide Band Based on Composite Right-/ Left-Handed Theory
- 电子学报 2024年52卷第8期 页码：2641-2647
- 作者机构：
1.南京邮电大学电子与光学工程学院，江苏南京 210042
2.华南理工大学电子与信息学院，广东广州 510641
- 作者简介：
沈光煦 男，1991年生，江苏盐城人.博士，南京邮电大学讲师，硕士生导师.主要研究方向为微波电路、毫米波集成电路、无源滤波器、射频开关.中国电子学会会员编号：E190025026M.E-mail: shen_guangxu@163.com
章晨扬 男，1998年生，江苏泰州人.目前就读于南京邮电大学.主要研究方向为无源集成电路.E-mail: absrtrus_brique@163.com
冯文杰 男，1985年生，河南商丘人.博士，华南理工大学教授，博士生导师.主要研究方向为微波毫米波电路与器件、电路封装技术等.中国电子学会会员编号：E190013916S.E-mail: fengwenjie1985@163.com
许锋
车文荃 女，1968年生，四川邻水人.中国电子学会会士，IEEE Fellow，华南理工大学教授，博士生导师.主要研究方向为电磁理论与计算电磁学、射频集成电路与天线、微波技术在医学上的应用.中国电子学会会员编号：E190016057F.E-mail: eewqche@scut.edu.cn
- 基金信息：国家自然科学基金(62001244;62231014;61931009);江苏省自然科学基金(BK20200742)
DOI：10.12263/DZXB.20230511
中图分类号： TN61;TN811收稿：2023-06-08，
修回：2023-10-07，
纸质出版：2024-08-25
- 稿件说明：
移动端阅览
沈光煦, 章晨扬, 冯文杰, 等. 基于复合左右手理论的双模态低损耗宽带毫米波片上传输线[J]. 电子学报, 2024, 52(08): 2641-2647.
SHEN Guang-xu, ZHANG Chen-yang, FENG Wen-jie, et al. Millimeter-Wave On-Chip Dual-Mode Transmission Line with Low Insertion Loss and Wide Band Based on Composite Right-/ Left-Handed Theory[J]. Acta Electronica Sinica, 2024, 52(08): 2641-2647.
沈光煦, 章晨扬, 冯文杰, 等. 基于复合左右手理论的双模态低损耗宽带毫米波片上传输线[J]. 电子学报, 2024, 52(08): 2641-2647. DOI：10.12263/DZXB.20230511
SHEN Guang-xu, ZHANG Chen-yang, FENG Wen-jie, et al. Millimeter-Wave On-Chip Dual-Mode Transmission Line with Low Insertion Loss and Wide Band Based on Composite Right-/ Left-Handed Theory[J]. Acta Electronica Sinica, 2024, 52(08): 2641-2647. DOI：10.12263/DZXB.20230511
摘要
本文提出了一种基于复合左右手（Composite Right-/Left-Handed，CRLH）理论的双模态毫米波片上传输线（Transmission Line，TL），有效兼顾了宽频段和低损耗特性，并且同时包含支持前向波的右手频段和支持后向波的左手频段.为解决毫米波半导体衬底高损耗、高寄生干扰的问题，本文首先提出T型片上CRLH单元，通过研究CRLH传输线的电路拓扑与结构实现，减小了传输损耗并展宽带宽.此外，文章通过研究色散特性实现左手和右手通带两种模态.基于砷化镓（GaAs）基集成无源器件（Integrated Passive Device，IPD）工艺，加工并实测了一款工作频段覆盖18~44.5 GHz的3阶周期CRLH TL.本文提出的传输线尺寸紧凑，为1.3 mm × 0.55 mm，带有GSG（Ground Signal Ground）焊盘，最小插入损耗为1.18 dB，3 dB相对带宽超过90%.该测试结果表明所提出的片上传输线可广泛应用于实现独特电磁相位特性的片上功能电路和系统.
Abstract
This article proposes a dual-mode millimeter-wave on-chip transmission line (TL) based on the composite right-/left-handed (CRLH) theory
featuring both wide bandwidth and low loss. In addition
both the right-handed (RH) band supporting the forward waves and the left-handed (LH) band supporting backward waves are realized. To address the issues of high loss and high parasitic effect in millimeter-wave range and on semi-conductor substrate
a T-type CRLH on-chip unit cell is proposed. To further reduce the transmission loss and extend the bandwidth
the circuit topology and structural realization are investigated. In addition
dual modes including the RH and LH bands are realized by analyzing the dispersion curve of the CRLH transmission line. Based on Gallium Arsenide (GaAs)-based integrated passive device (IPD) technology
a 3rd-order periodic CRLH TL ranging from 18~44.5 GHz was fabricated and measured. The proposed transmission line features a compact size of 1.3 mm × 0.55 mm including GSG (Ground Signal Ground) pads
a minimum insertion loss of 1.18 dB
and a 3 dB fractional bandwidth exceeding 90%. These measurement results demonstrate that the proposed on-chip transmission line can be widely applied in on-chip functional circuits and systems for unique electromagnetic phase characteristics.
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references
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