1.西安工程大学理学院,陕西西安 710048
2.射线柔性防护技术陕西省高校工程研究中心,陕西西安 710048
3.深圳市纽瑞芯科技有限公司,广东深圳 518000
[ "雷倩倩 女,1984年10月出生于陕西省西安市.现为西安工程大学理学院硕士生导师.研究方向为模拟、数模混合集成电路设计.E-mail: leiqianqian@163.com" ]
[ "熊剑辉 男,2000年9月出生于湖南省常德市.现为西安工程大学物理学专业硕士研究生.研究方向为射频集成电路.E-mail: xiongjhst@163.com" ]
[ "张旭东 男,1996年11月出生于河南省平顶山市.现为深圳市纽瑞芯科技有限公司模拟集成电路工程师.研究方向为模拟集成电路设计.E-mail: 15202462872@163.com" ]
收稿:2024-03-14,
修回:2025-02-03,
纸质出版:2025-02-25
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刘启航, 雷倩倩, 熊剑辉, 等. 面向UWB应用的多模可重构LNA设计[J]. 电子学报, 2025, 53(02): 431-439.
LIU Qi-hang, LEI Qian-qian, XIONG Jian-hui, et al. Design of Multimode Reconfigurable Low Noise Amplifier for UWB Applications[J]. Acta Electronica Sinica, 2025, 53(02): 431-439.
刘启航, 雷倩倩, 熊剑辉, 等. 面向UWB应用的多模可重构LNA设计[J]. 电子学报, 2025, 53(02): 431-439. DOI:10.12263/DZXB.20240241
LIU Qi-hang, LEI Qian-qian, XIONG Jian-hui, et al. Design of Multimode Reconfigurable Low Noise Amplifier for UWB Applications[J]. Acta Electronica Sinica, 2025, 53(02): 431-439. DOI:10.12263/DZXB.20240241
为了解决接收机射频前端单片多频段兼容性问题,本文提出了一种新型的面向超宽带应用的带宽可重构低噪声放大器(Low Noise Amplifier,LNA)结构.该LNA基于开关切换式可重构设计方法,将开关可调设计嵌套在级联LNA电路的负载中,通过对并联电阻反馈结构的负载电感进行可重构设计,控制低频阻抗谐振点和对应增益极点的位置来实现不同UWB工作模式带内匹配和增益曲线的切换,相较于在输入/输出匹配通路引入开关的设计方法,将开关置于负载级,在不影响阻抗匹配的前提下优化
增益和噪声;并对传统电感并联峰化技术中的电阻和电感进行可调设计兼顾不同工作带宽内的增益平坦度.基于SMIC 28 nm CMOS工艺,电磁建模提参后的仿真结果表明,LNA有3.1~10.6 GHz、6~10.6 GHz和3.1~5 GHz3种工作模式,可实现的带内电压增益(
S
21
)均处于16.59 dB以上,最小噪声系数小于3 dB;在0.8 V的电源电压下,3种模式的输入输出匹配(
S
11
、
S
22
)均小于-10 dB,静态功耗仅为9.03 mW;引入MOS开关后,3种带宽的LNA噪声系数恶化均小于0.2 dB.
To solve the compatibility problem of multi-band on a single chip in the RF front-end of the receiver
this paper proposes a new bandwidth-reconfigurable low noise amplifier (LNA) structure for UWB applications. This LNA is based on switchable reconfigurable design methods
embedding the switchable design in the load of the cascaded LNA circuit. The design achieves switching of in-band input impedance matching and gain curves for different UWB operating modes by controlling the position of low-frequency impedance resonance point and corresponding gain pole through the reconfigurable design of the load inductance of the resistive parallel negative feedback structure. Compared with the design methods of introducing switches in the input/output matching path
placing switches at the load optimizes gain and noise performance without affecting impedance matching. The resistors and inductors in the traditional inductive peaking technique are adjustable to consider gain flatness within different operating bandwidths. Based on SMIC 28 nm CMOS technology
the simulation results of electromagnetic modeling demonstrate that the LNA operates in three modes: 3.1~10.6 GHz
6~10.6 GHz
and 3.1~5 GHz
with in-band voltage gain (
S
21
) above 16.59 dB and minimum noise figure below 3 dB. Under 0.8 V power supply voltage
all three modes exhibit input and output matching (
S
11
S
22
) below -10 dB
with a static power consumption of only 9.03 mW; after introducing MOS switches
the noise figure degradation of the LNA in all three bandwidths is l
ess than 0.2 dB.
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