1.西安电子科技大学集成电路学部宽禁带半导体器件与集成技术全国重点实验室,陕西西安 710071
2.西安电子科技大学宽禁带半导体国家工程研究中心,陕西西安 710071
3.中国科学院半导体研究所,北京 100083
4.中国工程物理研究院核物理与化学研究所,四川绵阳 621900
[ "苏凯 男,1988年10月出生,陕西铜川人.现为西安电子科技大学集成电路学部副教授.主要研究方向为超宽禁带半导体金刚石材料及器件.E-mail: ksu@xidian.edu.cn" ]
[ "张金风 女,1977年9月出生,陕西铜川人.现为西安电子科技大学集成电路学部教授、博士生导师,国家级人才.主要研究方向为超宽禁带半导体金刚石材料及器件.E-mail: jfzhang@xidian.edu.cn" ]
[ "张逸韵 男,1986年4月出生,江苏连云港人.现为中国科学院半导体研究所研究员、博士生导师,中国科学院高层次人才.主要研究方向为氮化镓基等宽带隙及新兴超宽带隙半导体新型光电子器件及半导体探测器.E-mail: yyzhang@semi.ac.cn" ]
[ "蒋树庆 男,1983年7月出生,四川岳池人.现为中国工程物理研究院核物理与化学研究所副研究员,工学博士.主要研究方向为宽禁带半导体辐射探测器和Z-Pinch物理诊断.E-mail: jiangshq@aliyun.com" ]
[ "郭 辉 男,1978年5月出生,陕西西安人.现为西安电子科技大学集成电路学部研究员、博士生导师.主要研究方向为宽禁带半导体和超宽禁带半导体材料和器件.E-mail: guohui@mail.xidian.edu.cn" ]
[ "张进成 男,1976年7月出生,陕西富平人.现为西安电子科技大学党委常委、副校长、二级教授、博士生导师,国家级人才.主要研究方向为宽禁带与超宽禁带半导体材料、器件与集成系统.中国电子学会会员编号:E190008613M.E-mail: jchzhang@xidian.edu.cn" ]
[ "郝 跃 男,1958年3月出生,安徽阜阳人.中国科学院院士,微电子学家,全国教书育人楷模.现为西安电子科技大学教授、博士生导师,兼任国家自然科学基金委员会信息学部主任,第九、第十、第十三届全国政协委员和第十一、第十四届全国人大代表.主要研究领域包括新型宽禁带半导体器件和材料、新型微纳米半导体器件与材料、集成电路可制造性和可靠性理论与方法等.曾获国家技术发明奖、国家科技进步奖、国家教学成果奖及陕西省最高科学技术奖等.E-mail: yhao@xidian.edu.cn" ]
收稿:2024-04-02,
修回:2024-08-05,
纸质出版:2024-08-25
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苏凯, 张金风, 张逸韵, 等. 面向聚变中子探测的宽禁带半导体探测器关键问题与研究挑战[J]. 电子学报, 2024, 52(08): 2933-2938.
SU Kai, ZHANG Jin-feng, ZHANG Yi-yun, et al. Key Issue and Research Challenges of Wide Bandgap Semiconductor Detectors for Fusion Neutron Detection[J]. Acta Electronica Sinica, 2024, 52(08): 2933-2938.
苏凯, 张金风, 张逸韵, 等. 面向聚变中子探测的宽禁带半导体探测器关键问题与研究挑战[J]. 电子学报, 2024, 52(08): 2933-2938. DOI:10.12263/DZXB.20240293
SU Kai, ZHANG Jin-feng, ZHANG Yi-yun, et al. Key Issue and Research Challenges of Wide Bandgap Semiconductor Detectors for Fusion Neutron Detection[J]. Acta Electronica Sinica, 2024, 52(08): 2933-2938. DOI:10.12263/DZXB.20240293
近年来国际聚变反应研究获得重大进展,选择抗位移能力强的宽禁带半导体探测器是推动聚变研究的关键技术之一.金刚石超宽禁带半导体具备卓越抗辐照和时间响应等特性,是聚变诊断特别是高能中子诊断的理想材料,碳化硅宽禁带半导体也可测量中子,且大尺寸外延技术更成熟,可覆盖聚变研究装置上的大规模应用.通过这两种宽禁带半导体辐射探测器的研究并实现自主可控的高性能器件制备,将显著提高我国核聚变反应测量系统的性能,支持我国在未来的全球能源革命中处于领先优势.本文将对这两种宽禁带半导体探测器在聚变中子探测应用场景下研制的关键问题和研究挑战进行探讨,助力我国聚变能源开发和应用.
In recent years
significant progress has been made in international fusion reaction research. The neutron detection technology which can meet requirements of nuclear energy systems such as controlled fusion reactors featuring high-energy and high-dose radiation has always been one of the core technologies in fusion research and application. Choosing wide bandgap semiconductor materials with strong radiation hardness to develop radiation detectors is an inevitable requirement for the development of radiation detectors in fusion installation. Diamond has excellent radiation hardness and ultra-fast time response
and is considered an ideal semiconductor material for fusion detection
especially for high-energy neutron diagnosis. Silicon carbide is also qualified to directly measure fusion neutrons
and its large-size epitaxial growth technology is quite mature. Large-area and highly sensitive neutron detectors prepared using silicon carbide can cover large-scale applications in fusion research installation. By studying these two types of wide bandgap semiconductor radiation detectors and achieving completely self-dependent preparation of high-performance devices
we can significantly improve the performance of China’s nuclear fusion reaction measurement systems
and support China standing at the leading edge in the future global energy revolution. Therefore
this article will elaborate on the key issues and research challenges in the development of these two wide bandgap semiconductor detectors in the application scenarios of fusion neutron detection
to assist in the development and application of fusion energy in China.
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