应用于超大面阵高速图像传感器的双反馈环路列级缓冲技术研究

刘绥阳; 郭仲杰; 许睿明; 余宁梅

doi:10.12263/DZXB.20240423

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应用于超大面阵高速图像传感器的双反馈环路列级缓冲技术研究

学术论文 | 更新时间：2025-12-08

- 应用于超大面阵高速图像传感器的双反馈环路列级缓冲技术研究
- Dual-Feedback Loop Column Buffering Technology for Ultra-Large Area High-Speed Image Sensors
- 电子学报 2025年53卷第1期页码：94-104
- 作者机构：
  
  西安理工大学自动化与信息工程学院，陕西西安 710048
- 作者简介：
  
  [ "刘绥阳女，1997年8月出生于陕西省咸阳市.现为西安理工大学自动化与信息工程学院博士研究生.获陕西省教育厅创新成果奖2项.在国内外发表论文10余篇. E-mail: syliu@stu.xaut.edu.cn" ]
  [ "郭仲杰男，1982年出生于陕西省渭南市.现为西安理工大学教授、博导.主要从事超大规模集成电路设计技术研究工作. E-mail: zjguo@xaut.edu.cn" ]
  [ "许睿明男，1997年出生于内蒙古自治区巴彦淖尔市.现为西安理工大学自动化与信息工程学院博士研究生.主要研究方向为高性能混合集成电路的设计. E-mail: rmxu@stu.xaut.edu.cn" ]
  [ "余宁梅女，1963年出生于广东省梅州市.现为西安理工大学教授、博导.主要从事大规模集成电路设计与工艺研究工作.中国电子学会会员编号：E190010289S. E-mail: yunm@xaut.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(62171367);陕西省创新能力支撑计划项目(2022TD-39)
- DOI：10.12263/DZXB.20240423
  中图分类号： TN47;
- 收稿：2024-05-09，
  
  修回：2024-10-15，
  
  纸质出版：2025-01-25
- 稿件说明：
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刘绥阳, 郭仲杰, 许睿明, 等. 应用于超大面阵高速图像传感器的双反馈环路列级缓冲技术研究[J]. 电子学报, 2025, 53(01): 94-104.

LIU Sui-yang, GUO Zhong-jie, XU Rui-ming, et al. Dual-Feedback Loop Column Buffering Technology for Ultra-Large Area High-Speed Image Sensors[J]. Acta Electronica Sinica, 2025, 53(01): 94-104.
刘绥阳, 郭仲杰, 许睿明, 等. 应用于超大面阵高速图像传感器的双反馈环路列级缓冲技术研究[J]. 电子学报, 2025, 53(01): 94-104. DOI：10.12263/DZXB.20240423

LIU Sui-yang, GUO Zhong-jie, XU Rui-ming, et al. Dual-Feedback Loop Column Buffering Technology for Ultra-Large Area High-Speed Image Sensors[J]. Acta Electronica Sinica, 2025, 53(01): 94-104. DOI：10.12263/DZXB.20240423

摘要

列级读出电路是目前提升平面图像传感器读出效率最为明显的方式，但是对于亿级像素超大面阵规模下的大数据大负载高速读出，列级到输出级并串转换中的列级缓冲设计面临极大的挑战.本文提出一种基于双反馈环路的列级缓冲设计方法，该方法通过在列级缓冲的近端输出与远端输出间实现双反馈环路，有效抑制了列级总线的超大寄生参数对建立时间的影响，同时确保了低噪声高动态下的模拟信号精度.基于55 nm互补金属氧化物半导体（Complementary Metal Oxide Semiconductor，CMOS）工艺，在一款12 288 × 12 288像素规模的红外图像传感器中进行了成功的应用，结果表明：与传统列级缓冲相比，本文提出的双反馈环路列级缓冲设计方法可以将上升建立时间缩短23.4%，下降建立时间缩短21.9%，亿级高速图像传感器的帧率提升29.6%.

Abstract

The column-level readout circuit is the most obvious way to improve the readout efficiency of planar image sensors

but for the high-speed readout of large data and large loads on one hundred million of pixels

the design of column buffer in the parallel-serial conversion from column level to output level faces great challenges. In this paper

we propose a dual-feedback loop column buffer design method

which effectively suppresses the impact of the oversized parasitic parameters of the column bus on the setup time by implementing a dual-feedback loop between the proximal and distal outputs of the column buffer

and at the same time ensures the accuracy of the analogue signals under low-noise and high-dynamic conditions. Based on 55 nm complementary metal oxide semiconductor (CMOS) process

it has been successfully applied in a 12 288 × 12 288 pixel scale infrared image sensor. The results show that compared with the traditional column buffer

the dual-feedback loop column buffer proposed in this paper can shorten the rise build-up time by 23.4%

the fall build-up time by 21.9%

and the frame rate of one hundred million-level high-speed image sensor can be improved by more than 29.6%.

关键词

Keywords

references

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