1 200 V HVIC中应用电势控制技术的隔离结构

张森; 盘成务; 李浩宇; 何乃龙; 马杰; 张龙; 刘斯扬; 孙伟锋

doi:10.12263/DZXB.20240571

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1 200 V HVIC中应用电势控制技术的隔离结构

更新时间：2025-04-30

- 1 200 V HVIC中应用电势控制技术的隔离结构
- An Isolation Structure Applying Potential Control Technique in 1 200 V HVICs
- 电子学报 2025年页码：1-5
- 作者机构：
  
  1.东南大学国家ASIC工程研究中心，江苏南京 210096
  2.华润上华科技有限公司，江苏无锡 214061
- 作者简介：
  
  [ "张森男，2004年于电子科技大学获得学士学位，目前为东南大学电子信息专业学位在读博士生，无锡华润上华科技有限公司总经理，高级工程师.主要研究方向为功率半导体集成电路.E-mail: zhangsen@csmc.crmicro.com" ]
  [ "孙伟锋男，1977年出生，江苏武进人.2000年、2003年、2007年于东南大学分别获得学士、硕士、及博士学位.目前为东南大学首席教授，国家高层次人才，江苏省特聘教授，博士生导师.主要研究方向为功率集成电路.中国电子学会会员编号：E190009272S.E-mail: swffrog@seu.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(62274032)
- DOI：10.12263/DZXB.20240571
  中图分类号： TN433;TN305
- 收稿：2024-06-20，
  
  修回：2025-03-21，
  
  网络出版：2025-04-30，
- 稿件说明：
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张森, 盘成务, 李浩宇, 等. 1 200 V HVIC中应用电势控制技术的隔离结构[J/OL]. 电子学报, 2025,1-5.

ZHANG Sen, PAN Cheng-wu, LI Hao-yu, et al. An Isolation Structure Applying Potential Control Technique in 1 200 V HVICs[J/OL]. ACTA ELECTRONICA SINICA, 2025, 1-5.
张森, 盘成务, 李浩宇, 等. 1 200 V HVIC中应用电势控制技术的隔离结构[J/OL]. 电子学报, 2025,1-5. DOI： 10.12263/DZXB.20240571.

ZHANG Sen, PAN Cheng-wu, LI Hao-yu, et al. An Isolation Structure Applying Potential Control Technique in 1 200 V HVICs[J/OL]. ACTA ELECTRONICA SINICA, 2025, 1-5. DOI： 10.12263/DZXB.20240571.

摘要

本文提出了一种可应用于1 200 V隔离结构的电势控制技术.这一电势控制技术通过电势传递场板（Potential Delivering Field Plates，PDFPs）实现，PDFPs在高压结终端（High Voltage Junction Termination，HVJT）区域上具有相同的间距，在P型隔离环区域上PDFPs的间距开始调整，在N/P沟道横向双扩散金属-氧化物-半导体（Lateral Double-diffused Metal-Oxide-Semiconductor，LDMOS）上靠近源极和漏极侧的PDFPs之间的间距变宽、位于漂移区中部的PDFPs之间的间距变窄.HVJT区域的电势通过PDFPs传递至LDMOS区域，调节了LDMOS的表面电势分布并且防止了其提前击穿.实验结果表明采用PDFPs的隔离结构与没有应用PDFPs的隔离结构相比击穿电压提高了467%.

Abstract

A potential control technique that can be used in 1 200 V isolation structure is proposed. Such potential control technique is realized through the potential delivering field plates (PDFPs). The PDFPs have the same spacing in the high voltage junction termination region

and the spacing of PDFPs begins to adjust in the P-type isolation ring region. The spacing of PDFPs near the source and drain side on the N/P channel lateral double-diffused metal-oxide-semiconductor are widened

and the spacing of PDFPs in the middle of the drift region is narrowed. The potential of the HVJT is delivered to the LDMOS region by PDFPs

which regulates the surface potential distribution of the LDMOS and prevents its premature breakdown. The experimental results indicate that the proposed isolation structure has 467% improvement in breakdown voltage compared with the isolation structure without PDFPs.

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references

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