Si衬底上基于诱导成核技术的高质量GaN外延

许钪; 许晟瑞; 陶鸿昌; 苏华科; 高源; 杨赫; 安瑕; 黄俊; 张进成; 郝跃

doi:10.12263/DZXB.20240662

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Si衬底上基于诱导成核技术的高质量GaN外延

学术论文 | 更新时间：2025-12-11

- Si衬底上基于诱导成核技术的高质量GaN外延
- High Quality GaN Epitaxy Based on Induced Nucleation Technology on Si Substrate
- 电子学报 2024年52卷第12期页码：3907-3913
- 作者机构：
  
  1.西安电子科技大学集成电路学部，陕西西安 710071
  2.宽禁带半导体器件与集成技术全国重点实验室，陕西西安 710071
  3.湖北九峰山实验室，湖北武汉 430074
- 作者简介：
  
  [ "许钪男，2000年出生于山东省临沂市.现为西安电子科技大学集成电路学部硕士研究生.主要研究方向为Si基GaN材料外延和器件制备.E-mail: 1519685775@qq.com" ]
  [ "许晟瑞男，现为西安电子科技大学集成电路学部教授，博士生导师.共发表学术论文132篇，主持国家自然科学基金3项，获得陕西省科学技术一等奖，入选陕西省杰出青年.E-mail: srxu@xidian.edu.cn" ]
  [ "陶鸿昌男，1997年出生于安徽省阜阳市.于2023年获得西安电子科技大学博士学位.共发表学术论文10余篇.主要研究方向为宽带隙半导体和氮化物LED.E-mail: taohongchang@xidian.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(62074120);国家资助博士后研究人员计划(GZC20241306);湖北省开发项目(2022BFE001)
- DOI：10.12263/DZXB.20240662
  中图分类号： TN303;TN325+.3
- 收稿：2024-07-17，
  
  修回：2024-09-05，
  
  纸质出版：2024-12-25
- 稿件说明：
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许钪, 许晟瑞, 陶鸿昌, 等. Si衬底上基于诱导成核技术的高质量GaN外延[J]. 电子学报, 2024, 52(12): 3907-3913.

XU Kang, XU Sheng-rui, TAO Hong-chang, et al. High Quality GaN Epitaxy Based on Induced Nucleation Technology on Si Substrate[J]. Acta Electronica Sinica, 2024, 52(12): 3907-3913.
许钪, 许晟瑞, 陶鸿昌, 等. Si衬底上基于诱导成核技术的高质量GaN外延[J]. 电子学报, 2024, 52(12): 3907-3913. DOI：10.12263/DZXB.20240662

XU Kang, XU Sheng-rui, TAO Hong-chang, et al. High Quality GaN Epitaxy Based on Induced Nucleation Technology on Si Substrate[J]. Acta Electronica Sinica, 2024, 52(12): 3907-3913. DOI：10.12263/DZXB.20240662

摘要

氮化镓（GaN）具有直接带隙、高频、大功率和高电子迁移率等优良的材料特性，使其在电力电子和光电器件等领域都具有广阔的应用前景.Si衬底具备大尺寸、低成本和工艺兼容性好等优势，所以Si基GaN具有很高的研究价值和商业价值.GaN材料的晶体质量决定着GaN基器件的性能，但Si基GaN的晶体质量较差，为此研究人员提出了多种方法来提高GaN的晶体质量，但都存在工艺复杂或成本高昂等问题.因此，本研究提出一种工艺简单且成本低的诱导成核技术来获取高质量的Si基GaN材料.对Si衬底完成相同剂量的N离子注入后进行不同时间的快速热退火处理，使用金属有机化学气相沉积法进行外延生长.结果表明，退火时间为6 min的样品具有最好的晶体质量，表面形貌和光学性能，与对照样品相比，螺位错密度降低14.7%，刃位错密度降低34.4%，总位错密度降低26.1%，并且提高了AlGaN/GaN异质结界面处的二维电子气面密度和电子迁移率，提高了AlGaN/GaN异质结的电学性能.

Abstract

GaN has excellent material properties such as direct bandgap

high frequency

high power

and high electron mobility

making them have broad application prospects in fields such as power electronic devices and optoelectronic devices. Si substrates have advantages such as large size

low cost

and good process compatibility

so the GaN-on-Si has high research and commercial value. The crystal quality of GaN materials determines the performance of GaN based devices

but the crystal quality of GaN-on-Si is poor. So

researchers have proposed various methods to improve the crystal quality of GaN

but all of them have problems such as complex processes or high costs. Therefore

this research proposes a simple and low-cost induced nucleation technique to obtain high-quality Si based GaN materials. After completing the same dose of N ion implantation on Si substrate

rapid thermal annealing (RTA) treatment was carried out for different times

and epitaxial growth was carried out using metal organic chemical vapor deposition (MOCVD) method. The results showed that the sample with an annealing time of 6 minutes had the best crystal quality

surface morphology

and optical performance. Compared with the control sample

the screw dislocation density decreased by 14.7%

the edge dislocation density decreased by 34.4%

the total dislocation density decreased by 26.1%

and the two-dimensional electron gas (2DEG) surface density and electron mobility at the AlGaN/GaN heterojunction interface were improved

which improved the electrical performance of the AlGaN/GaN heterojunction.

关键词

Keywords

references

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