基于TCAD与DNN的FinFET器件辐射总剂量效应模型

周颖; 刘小年; 刘焱森; 曹鹏

doi:10.12263/DZXB.20241033

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基于TCAD与DNN的FinFET器件辐射总剂量效应模型

学术论文 | 更新时间：2026-05-28

- 基于TCAD与DNN的FinFET器件辐射总剂量效应模型
- A TCAD-DNN-Based Total-Ionizing-Dose Effect Model for FinFET Devices
- 电子学报 2026年54卷第2期页码：634-645
- 作者机构：
  
  1.湖南师范大学物理与电子科学学院，湖南长沙 410081
  2.后摩尔时代物理与器件湖南省普通高等学校重点实验室，湖南长沙 410081
- 作者简介：
  
  [ "周颖女，1999年5月出生于湖南省娄底市。2025年研究生毕业于湖南师范大学物理与电子科学学院。主要研究方向为微电子器件。E-mail: 2451833348@qq.com" ]
  [ "刘小年男，1990年12月出生于湖南省岳阳市。现为湖南师范大学物理与电子科学学院副教授、硕士生导师。主要研究方向为微电子器件与集成电路的辐射效应。中国电子学会会员编号：E190157336M。E-mail: xiaonian@hunnu.edu.cn" ]
  [ "刘焱森男，2001年1月出生于湖南省益阳市。2025年研究生毕业于湖南师范大学物理与电子科学学院。主要研究方向为微电子器件。E-mail: yansen@hunnu.edu.cn" ]
  [ "曹鹏男，1999年11月出生于湖南省郴州市。现为湖南师范大学物理与电子科学学院硕士研究生。主要研究方向为微电子器件。E-mail: 202370112326@hunnu.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(62204083);湖南省自然科学基金(2024JJ6322)
- DOI：10.12263/DZXB.20241033
  中图分类号： TN386.1;
- 收稿：2024-11-14，
  
  录用：2026-01-27，
  
  纸质出版：2026-02-25
- 稿件说明：
移动端阅览
周颖, 刘小年, 刘焱森, 等. 基于TCAD与DNN的FinFET器件辐射总剂量效应模型[J]. 电子学报, 2026, 54(02): 634-645.

ZHOU Ying, LIU Xiaonian, LIU Yansen, et al. A TCAD-DNN-Based Total-Ionizing-Dose Effect Model for FinFET Devices[J]. Acta Electronica Sinica, 2026, 54(02): 634-645.
周颖, 刘小年, 刘焱森, 等. 基于TCAD与DNN的FinFET器件辐射总剂量效应模型[J]. 电子学报, 2026, 54(02): 634-645. DOI：10.12263/DZXB.20241033

ZHOU Ying, LIU Xiaonian, LIU Yansen, et al. A TCAD-DNN-Based Total-Ionizing-Dose Effect Model for FinFET Devices[J]. Acta Electronica Sinica, 2026, 54(02): 634-645. DOI：10.12263/DZXB.20241033

摘要

先进鳍式场效应晶体管（Fin Field-Effect Transistor，FinFET）因其高集成度、强栅极控制能力、高驱动电流、高开关速度、低泄漏电流等优势，在先进集成电路中成为主要的晶体管器件。为得到器件物理层面的FinFET工艺下不同器件尺寸的辐射总剂量（Total-Ionizing-Dose，TID）效应模型，本文结合TCAD（Technology Computer Aided Design）技术与深度神经网络（Deep Neural Networks，DNN）技术提出并建立了一个辐射总剂量效应模型（TCAD-DNN模型）来预测器件的TID效应的电学响应。本文采用Synopsys Sentaurus TCAD软件对SMIC 14 nm CMOS工艺下的FinFET进行三维（3D）器件建模并进行实测数据校准，后利用Sentaurus软件内置的Gamma射线总剂量辐射模型对器件进行辐射总剂量效应模拟仿真，相比于添加固定电荷以模拟总剂量辐射效应的做法，Gamma射线总剂量辐射模型可以得到更为真实的总剂量效应陷阱电荷分布。通过对器件在辐照前后进行实际电学特性测试，将得到的辐照前后实测数据用于TCAD模型校准，对此工艺节点下不同器件尺寸进行仿真产生数据集，其中32 928个器件数据点作为训练集对该模型进行训练，另外8 232个器件数据点作为测试集，对FinFET器件在开态（ON）辐照偏置下的总剂量效应进行预测。训练后的最终模型所得曲线与测试集数据的平均相对误差为2.98‰。此外，模型所得预测曲线与辐照后的实测数据也有极佳的吻合度，进一步验证了模型在实际工程应用中的巨大潜力。本文结合TCAD仿真技术和深度学习技术构建的TCAD-DNN模型仅需提供特定尺寸范围内的若干器件尺寸的电学特性曲线作为训练集对TCAD-DNN模型进行训练，训练完成后的模型能够在毫秒量级的调用时间内得到一定尺寸和总剂量范围内所有器件可靠的电学性能。此模型有效避免了TCAD仿真中的耗时过长和收敛性不稳定问题，成功预测了器件总剂量效应的电学响应对辐射剂量和器件几何参数方面的依赖性，该模型较高的预测精度和较好的灵活性使其能够应用在FinFET器件设计优化和器件与集成电路抗辐射加固等领域。

Abstract

The fin field-effect transistor (FinFET) has become the primary transistor device in advanced integrated circuits due to its advantages such as high integration

strong gate control capability

high drive current

high switching speed

and low leakage current. To obtain a physical-level total-ionizing-dose (TID) effect model for different device sizes under FinFET technology in advanced integrated circuits

this paper proposes and establishes a technology computer aided design-deep neural networks (TCAD-DNN) model to predict the electrical response of TID effects in devices. This paper uses Synopsys Sentaurus TCAD software to perform three-dimensional (3D) device modeling and actual measurement data calibration for FinFETs in the SMIC 14 nm CMOS process. Subsequently

the built-in Gamma-ray total dose irradiation model in Sentaurus software is utilized to simulate the total dose irradiation effects of the devices. Compared to the method of adding fixed charges to simulate total dose irradiation effects

the Gamma-ray total dose radiation model can obtain a more realistic distribution of trap charges due to total dose effects. By conducting actual electrical characteristic tests on the devices before and after irradiation

the obtained measured data before and after irradiation are used for TCAD model calibration. Simulations are performed on different device sizes under this process node to generate a dataset

where 32 928 device data points serve as the training set to train the model

and another 8 232 device data points serve as the test set to predict the total dose effects of FinFET devices under ON-state irradiation bias. The average relative error between the final model curve obtained after training and the test set data is 2.98‰. Furthermore

the predicted curve obtained from the model also has excellent agreement with the measured data after irradiation

which further verifies the great potential of the model in practical engineering applications. The TCAD-DNN model constructed in this paper

combining TCAD simulation technology and deep learning technology

only requires the provision of electrical characteristic curves for a certain range of device sizes as the training set for training the TCAD-DNN model. The trained model can obtain reliable electrical performance for all devices within a certain size and total dose range within a millisecond-scale call time. This model effectively avoids the issues of excessive simulation time and unstable convergence in TCAD simulations

successfully predicting the dependence of the electrical response of total dose effects on radiation dose and device geometric parameters. The high prediction accuracy and good flexibility of this model make it applicable in fields such as FinFET device design optimization and radiation hardening of devices and integrated circuits.

关键词

Keywords

references

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