Ga2O3纳米线在水热法合成中选择性生长弱化的原因
Weak Selective Growth of Ga2O3 Nanowires in Hydrothermal Synthesis
- 电子学报 2025年53卷第6期 页码：1906-1916
- 作者机构：
北京工业大学电子科学与技术系，北京 100124
- 作者简介：
[ "李可心 女，2002年7月出生于河北省唐山市.现就读于北京工业大学.主要研究方向为宽禁带半导体材料与器件. E-mail: likexin732002@163.com" ]
[ "靳晓频 女，1997年7月出生于河北省石家庄市.2023年毕业于北京工业大学.主要研究方向为信息光电子学与光通信. E-mail: jinxp@mail.tsinghua.edu.cn" ]
[ "高志远 女，本硕博毕业于西安电子科技大学，现为北京工业大学副教授.主要研究方向为纳米材料生长表征、纳米器件制作、微纳系统集成.发表论文40余篇，获得专利10余项. E-mail: zygao@bjut.edu.cn" ]
[ "朱海昌 男，1998年11月出生于河北省定州市.2025年毕业于北京工业大学.主要研究方向为宽禁带半导体材料与器件. E-mail: zhu1230607@163.com" ]
[ "徐博岩 男，2001年3月出生于河北省保定市.现就读于北京工业大学.主要研究方向为信息光电子学与光通信. E-mail: nayobux@163.com" ]
[ "杨琦 男，2000年8月出生于河北省深州市.现就读于北京工业大学.主要研究方向为宽禁带半导体器件. E-mail: 2286784783@qq.com" ]
- 基金信息：国家自然科学基金(11204009);北京市自然科学基金(4142005;4182014)
DOI：10.12263/DZXB.20241047
中图分类号： TN3;收稿：2024-11-21，
修回：2025-04-06，
纸质出版：2025-06-25
- 稿件说明：
移动端阅览
李可心, 靳晓频, 高志远, 等. Ga2O3纳米线在水热法合成中选择性生长弱化的原因[J]. 电子学报, 2025, 53(06): 1906-1916.
LI Ke-xin, JIN Xiao-pin, GAO Zhi-yuan, et al. Weak Selective Growth of Ga2O3 Nanowires in Hydrothermal Synthesis[J]. Acta Electronica Sinica, 2025, 53(06): 1906-1916.
李可心, 靳晓频, 高志远, 等. Ga2O3纳米线在水热法合成中选择性生长弱化的原因[J]. 电子学报, 2025, 53(06): 1906-1916. DOI：10.12263/DZXB.20241047
LI Ke-xin, JIN Xiao-pin, GAO Zhi-yuan, et al. Weak Selective Growth of Ga2O3 Nanowires in Hydrothermal Synthesis[J]. Acta Electronica Sinica, 2025, 53(06): 1906-1916. DOI：10.12263/DZXB.20241047
摘要
超宽禁带半导体Ga₂O₃米线作为一种具备独特性能的纳米材料，近年来在科学界引起了广泛的关注.作为第三代金属氧化物半导体的ZnO，ZnO纳米线的生长对衬底具有选择性，可以在与其同质的衬底上实现高均匀性的阵列，但在异质衬底上不易长出，从而实现自组织的微纳结构的图案化；然而对于新型金属氧化物半导体Ga₂O₃来说，Ga₂O₃纳米线的生长对衬底的选择性并不强，在同质衬底上实现的阵列既不均匀也不密集，并且在各种衬底上也均可长出.本文通过水热法生长纳米线的多组对比性实验，全面且系统地探讨了影响Ga₂O₃纳米线形貌的因素，利用控制变量法研究各因素之间的关系，发现了Ga₂O₃纳米线选择性生长出现弱化是因为晶格失配度不再是决定纳米线生长的唯一重要因素，并提出异质成核，把种子层的晶粒尺寸和粗糙度作为核心因素，发现它们是影响纳米线生长形态与密度的另一决定性因素，二者同时在Ga₂O₃纳米线生长过程中发挥关键作用.这一结论对于深入理解Ga₂O₃纳米线的生长机制并制备自组织器件结构具有重要的指导意义.
Abstract
Ultra-broadband semiconductor gallium oxide (Ga₂O₃) nanowires have attracted much attention in the scientific community in recent years as a nanomaterial with unique properties. As a third-generation metal-oxide semiconductor
ZnO
the growth of ZnO nanowires is substrate-selective
and highly uniform arrays can be achieved on substrates homogeneous to it
but they are not easy to grow on heterogeneous substrates
thus enabling the patterning of self-organized micro- and nanostructures; however
for a new metal-oxide semiconductor
Ga₂O₃
the growth of Ga₂O₃ nanowires is not substrate-selective. The arrays realized on homogeneous substrates are neither homogeneous nor dense and can be grown on a variety of substrates. In this paper
we comprehensively and systematically explore the factors affecting the morphology of Ga₂O₃ nanowires through several sets of comparative experiments on the growth of nanowires by hydrothermal method
investigat the relationship between the factors by using the control variable method
found that the selective growth of Ga₂O₃ nanowires is weakened because lattice matching is no longer the only important factor determining the growth of the nanowires
and propose the heterogeneous nucleation
which take the grain size and roughness of the seed layer as the core factors
and find that they are not as important as those in the growth of the nanowires
roughness as core factors
and find that they are another decisive factor affecting the morphology and density of nanowire growth
and both of them play a key role in the Ga₂O₃ nanowire growth process at the same time. This conclusion is of great significance in guidingthe in-depth understanding of the growth mechanism of Ga₂O₃ nanowires and the preparation of self-organized device structures.
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