基于漏极电压和源极电压检测的SiC MOSFET过流保护芯片

李强; 杨媛; 文阳; 赵天阳; 李亚兰; 茹逍

doi:10.12263/DZXB.20241156

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基于漏极电压和源极电压检测的SiC MOSFET过流保护芯片

学术论文 | 更新时间：2025-12-27

- 基于漏极电压和源极电压检测的SiC MOSFET过流保护芯片
- Overcurrent Protection IC for SiC MOSFETs Based on the Drain-Voltage and Source-Voltage Detection
- 电子学报 2025年53卷第9期页码：3211-3222
- 作者机构：
  
  1.西安理工大学自动化与信息工程学院，陕西西安 710048
  2.包头师范学院物理科学与技术学院，内蒙古包头 014030
- 作者简介：
  
  [ "李强男，1984年12月出生于内蒙古自治区包头市.现为包头师范学院物理科学与技术学院副教授、硕士生导师.主要研究方向为电源管理芯片、宽禁带半导体器件的驱动保护技术. E-mail: lq@bttc.edu.cn" ]
  [ "杨媛女，1974年10月出生于湖南省江平市.现为西安理工大学电子工程系教授、博士生导师.研究方向为数模拟混合集成电路设计、轨道电路系统设计、功率半导体器件驱动保护技术. E-mail: yangyuan@xaut.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(62174134);西安市重点产业链关键核心技术攻关项目(23LLRH0044);包头师范学院科研项目(BSYKJ2023-ZY07)
- DOI：10.12263/DZXB.20241156
  中图分类号： TN492;
- 收稿：2024-12-24，
  
  录用：2025-09-11，
  
  纸质出版：2025-09-25
- 稿件说明：
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李强, 杨媛, 文阳, 等. 基于漏极电压和源极电压检测的SiC MOSFET过流保护芯片[J]. 电子学报, 2025, 53(09): 3211-3222.

LI Qiang, YANG Yuan, WEN Yang, et al. Overcurrent Protection IC for SiC MOSFETs Based on the Drain-Voltage and Source-Voltage Detection[J]. Acta Electronica Sinica, 2025, 53(09): 3211-3222.
李强, 杨媛, 文阳, 等. 基于漏极电压和源极电压检测的SiC MOSFET过流保护芯片[J]. 电子学报, 2025, 53(09): 3211-3222. DOI：10.12263/DZXB.20241156

LI Qiang, YANG Yuan, WEN Yang, et al. Overcurrent Protection IC for SiC MOSFETs Based on the Drain-Voltage and Source-Voltage Detection[J]. Acta Electronica Sinica, 2025, 53(09): 3211-3222. DOI：10.12263/DZXB.20241156

摘要

为解决碳化硅金属氧化物半导体场效应晶体管（SiC Metal Oxide Semiconductor Field Effect Transistor，SiC MOSFET）硬开关故障（Hard Switch Fault，HSF）、负载故障（Fault Under Load，FUL）和过载故障（OverLoad fault，OL）的问题，本文提出了一种基于SiC MOSFET漏极电压和源极电压检测的过流保护方法（OverCurrent Protection method based on the Drain-voltage and Source-voltage Detection，DSD-OCP）.该方法通过检测电路实时监控SiC MOSFET的漏极电压和源极电压来准确识别短路故障和过载故障，并利用驱动电路控制SiC MOSFET的开通和关断，从而实现快速短路保护和自适应过载保护，同时还集成软关断功能.基于0.5 µm双极型-互补金属氧化物半导体-双扩散金属氧化物半导体（Bipolar-CMOS-DMOS，BCD）工艺，设计了DSD-OCP电路并进行流片，芯片面积为2.8 mm².采用研制

的芯片搭建1200 V/80 m

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2.20133328

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2.37066650

SiC MOSFET测试平台，并验证了DSD-OCP方法的有效性.实验结果表明，SiC MOSFET在DSD-OCP芯片保护下的HSF和FUL持续时间分别为88 ns和105 ns.在不同母线电压下，DSD-OCP芯片能够为SiC MOSFET提供自适应的过载保护.因DSD-OCP芯片具有软关断功能，SiC MOSFET在过流保护时的漏极电压过冲不超过110 V.

Abstract

To address the issues of hard switch fault (HSF)

fault under load (FUL)

and overload fault (OL) for SiC MOSFETs

this paper proposes an overcurrent protection method based on the drain-voltage and source-voltage detection (DSD-OCP). The DSD-OCP employs a detection circuit to monitor the drain-voltage and source-voltage of SiC MOSFETs in real time

enabling accurate identification of short-circuit and overload faults. It utilizes a drive circuit to control the turn-on and turn-off of the SiC MOSFET

resulting in fast short-circuit protection and adaptive overload protection. And it also integrates a soft turn-off function. The DSD-OCP circuit is designed and fabricated based on 0.5 µm BCD process with a chip area of 2.8 mm². The developed chip is used to construct a 1200 V/80 m

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2.20133328

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2.37066650

SiC MOSFET test platform

and the effectiveness of the DSD-OCP is verified. Experimental results show that the HSF and FUL durations of the SiC MOSFET are 88 ns and 105 ns

respectively. Under different bus voltages

the DSD-OCP chip can provide adaptive overload protection for the SiC MOSFET. Since the DSD-OCP chip offers a soft turn-off function

the drain voltage overshoot of the SiC MOSFET during overcurrent protection does not exceed 110 V.

关键词

Keywords

references

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