基于InP HEMT工艺的低噪声放大器模块气密性封装

邓世河; 张盟; 沈亚飞; 谢振超; 王文伟

doi:10.12263/DZXB.20250526

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基于InP HEMT工艺的低噪声放大器模块气密性封装

学术论文 | 更新时间：2026-02-05

- 基于InP HEMT工艺的低噪声放大器模块气密性封装
- Hermetically Packaged Low-Noise Amplifier Module Based on InP HEMT Technology
- 电子学报 2025年53卷第10期页码：3497-3503
- 作者机构：
  
  上海航天电子技术研究所，上海 201100
- 作者简介：
  
  [ "邓世河男，2000年11月出生于重庆市.2023年毕业于苏州大学通信工程专业，获学士学位.现为上海航天技术研究院硕士研究生，主修微波与天线技术.主要研究方向为低温接收前端集成与测试，毫米波/太赫兹集成电路设计与封装. E-mail: dsh15826488821@163.com" ]
  [ "张盟男，1993年5月出生于辽宁省朝阳市.2024年毕业于德国杜伊斯堡埃森大学电子与电气工程专业，获博士学位.现为上海航天电子技术研究所高级工程师.主要研究方向为太赫兹准光收发隔离网络设计，共振隧穿二极管源和无线注入技术，片上太赫兹天线测试系统设计，深硅刻蚀和倒装等微纳加工及先进封装工艺等.E-mail: meng.zhang-sast@out.com" ]
  [ "沈亚飞男，1990年3月出生于江苏省泰州市.现为上海航天电子技术研究所高级工程师.主要研究方向为功率放大器和射频前端设计. E-mail: shenyafei900914@163.com" ]
  [ "谢振超男，1982年9月出生于上海市.现为上海航天电子技术研究所研究员、硕士生导师.主要研究方向为卫星有效载荷.E-mail: xiezhch@126.com" ]
  [ "王文伟男，1982年9月出生于湖南省永兴县.现为上海航天电子技术研究所研究员、硕士生导师.主要研究方向为微波辐射计接收机系统. E-mail: www804@163.com" ]
- 基金信息：
  
  国家重点研发计划(2023YFB3905604)
- DOI：10.12263/DZXB.20250526
  中图分类号： TN454;
- 收稿：2025-06-20，
  
  录用：2025-10-11，
  
  纸质出版：2025-10-25
- 稿件说明：
移动端阅览
邓世河, 张盟, 沈亚飞, 等. 基于InP HEMT工艺的低噪声放大器模块气密性封装[J]. 电子学报, 2025, 53(10): 3497-3503.

DENG Shi-he, ZHANG Meng, SHEN Ya-fei, et al. Hermetically Packaged Low-Noise Amplifier Module Based on InP HEMT Technology[J]. Acta Electronica Sinica, 2025, 53(10): 3497-3503.
邓世河, 张盟, 沈亚飞, 等. 基于InP HEMT工艺的低噪声放大器模块气密性封装[J]. 电子学报, 2025, 53(10): 3497-3503. DOI：10.12263/DZXB.20250526

DENG Shi-he, ZHANG Meng, SHEN Ya-fei, et al. Hermetically Packaged Low-Noise Amplifier Module Based on InP HEMT Technology[J]. Acta Electronica Sinica, 2025, 53(10): 3497-3503. DOI：10.12263/DZXB.20250526

摘要

本文设计并实现了一款基于磷化铟高电子迁移率晶体管（High Electron Mobility Transistor，HEMT）芯片的低插损、气密性低噪声放大器（Low Noise Amplifier，LNA）模块.针对传统波导E面探针（E代表波导的电场平面）封装结构在环境实验中容易受到水汽影响的缺陷，提出具有气密性能的垂直波导-微带过渡设计，提升了放大器模块在恶劣环境中的可靠性.同时，通过在波导短路区域周围引入周期性间隙波导结构，有效抑制了石英基板中电磁波能量泄漏与高次模谐振.仿真结果表明，该波导-微带过渡结构在87.5~90.5 GHz内反射损耗小于-25 dB，插入损耗小于0.3 dB.通过补偿键合金丝自身引入的寄生电感，带内反射性能由-15 dB改善至-25 dB，降低能量在传输过程的反射.模块实测结果显示，放大器模块在工作频段内增益大于20 dB，输入端反射损耗小于-20 dB，典型噪声系数值为2.5 dB，双边封装导致的损耗小于1 dB.整体性能与芯片手册数据吻合度较高，验证了该设计的有效性.

Abstract

This paper presents the design and implementation of a low-insertion-loss

hermetic low-noise amplifier (LNA) module based on an indium phosphide high-electron-mobility transistor (InP HEMT) chip. To address the vulnerability of traditional E-plane probe waveguide packaging structures to moisture during environmental testing

a hermetic vertical waveguide-to-microstrip transition structure is proposed

enhancing the reliability of the amplifier module in harsh conditions. Furthermore

by introducing a periodic gap waveguide structure around the waveguide short-circuit region

energy leakage and higher-order mode resonance in the quartz substrate are effectively suppressed. Simulation results demonstrate that the proposed transition structure achieves a return loss better than -25 dB and an insertion loss below 0.3 dB across 87.5~90.5 GHz. Through compensation for the parasitic inductance introduced by bonding wires

the in-band return performance is improved from -15 dB to -25 dB

reducing energy reflection during transmission. Measured results indicate a gain greater than 20 dB

an input return loss below -20 dB

a typical noise figure of 2.5 dB

and a total loss induced by the bilateral packaging of less than 1 dB within the operating band. The overall performance shows good agreement with the chip datasheet

validating the effectiveness of the proposed design.

关键词

Keywords

references

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